IGBT 650V 50A TO247 Package HXY MOSFET NGTB50N65FL2WG HXY Featuring Positive Temperature Coefficient
Key Attributes
Model Number:
NGTB50N65FL2WG-HXY
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
110ns
Td(on):
17ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
1.916nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@250uA
Gate Charge(Qg):
71nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
56ns
Switching Energy(Eoff):
510uJ
Turn-On Energy (Eon):
1.35mJ
Mfr. Part #:
NGTB50N65FL2WG-HXY
Package:
TO-247
Product Description
Product Overview
The NGTB50N65FL2WG is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low Gate Charge, and low Saturation Voltage. The maximum junction temperature is 175C.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Model: NGTB50N65FL2WG
- Origin: Shenzhen, China
- Package: TO-247
- Packing: 30PCS
Technical Specifications
| Symbol | Parameter | Conditions | Value | Units |
| Absolute Maximum Ratings | ||||
| VCE | Collector emitter voltage | 650 | V | |
| IC | DC collector current(1) | TC = 25C | 80 | A |
| IC | DC collector current(1) | TC = 100C | 50 | A |
| ICM | Pulsed collector current | TC = 25C | 200 | A |
| IF | Maximum Diode forward current(1) | TC = 25C | 80 | A |
| IF | Maximum Diode forward current(1) | TC = 100C | 50 | A |
| IFM | Diode pulsed current | TC = 25C | 200 | A |
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V |
| VGE | Transient Gate-Emitter Voltage | (tp 10s, D < 0.010), TVJ = 25C | 30 | V |
| Ptot | Power Dissipation | TC = 25C | 250 | W |
| Ptot | Power Dissipation | TC = 100C | 129 | W |
| TVJ | Operating Junction Temperature Range | -40 to +175 | C | |
| TSTG | Storage Temperature Range | -55 to +150 | C | |
| Features | ||||
| VCE(SAT) | Low Saturation Voltage | |||
| TVJmax | Maximum junction temperature | 175 | C | |
| Application | ||||
| Applications | UPS, EV-Charger, Solar String Inverter, Energy Storage Inverter | |||
| Electrical Characteristics | ||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A, TVJ = 25C | 1.6 | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A, TVJ = 125C | 1.93 | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A, TVJ = 175C | 2.0 | V |
| VF | Diode forward voltage | VGE = 0V , IC = 50A, TVJ = 25C | 1.85 | V |
| VF | Diode forward voltage | VGE = 0V , IC = 50A, TVJ = 125C | 1.6 | V |
| VF | Diode forward voltage | VGE = 0V , IC = 50A, TVJ = 175C | 1.45 | V |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 3.2 - 4.8 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | 50 | mA |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | 100 | nA |
| gfs | Transconductance | VGE = 20V, IC = 50A | 56 | S |
| Dynamic Characteristics | ||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 1916 | pF |
| Coes | Output Capacitance | 139 | pF | |
| Cres | Reverse Transfer Capacitance | 13 | pF | |
| Qg | Gate Charge | VGE = 0 to 15V, VCE = 520V, IC = 50A | 71 | nC |
| Qge | Gate to Emitter charge | 10 | nC | |
| Qgc | Gate to Collector charge | 21 | nC | |
| Switching Characteristics | ||||
| td(on) | Turn-On Delay Time | VGE = 15V, VCC = 400V, IC= 50A, RG(off) = 12,RG(on) = 12 | 17 | ns |
| tr | Turn-On Rise Time | 30 | ns | |
| td(off) | Turn-Off Delay Time | 110 | ns | |
| tf | Turn-Off Fall Time | 34 | ns | |
| Eon | Turn-on energy | 1.35 | mJ | |
| Eoff | Turn-off energy | 0.51 | mJ | |
| Ets | Total switching energy | 1.86 | mJ | |
| Diode Recovery Characteristics | ||||
| Trr | Reverse recovery time | VR = 400 V, IF = 50 A, di/dt = 400 A/S | 56 | ns |
| Qrr | Reverse recovery charge | 0.27 | mC | |
| Irrm | Peak reverse recovery current | 8 | A | |
| Thermal Resistance | ||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |
| RJC | Thermal resistance: junction - case IGBT | 0.65 | C/W | |
| RJC | Thermal resistance: junction - case Diode | 0.58 | C/W | |
2509181737_HXY-MOSFET-NGTB50N65FL2WG-HXY_C49003319.pdf
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