High Current MOSFET HUAYI HY5110NA2W with Low On State Resistance and Lead Free Green Device Options
Key Attributes
Model Number:
HY5110NA2W
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
295A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
638pF
Number:
1 N-channel
Output Capacitance(Coss):
1.112nF
Input Capacitance(Ciss):
14.818nF
Pd - Power Dissipation:
500W
Gate Charge(Qg):
286.5nC@10V
Mfr. Part #:
HY5110NA2W
Package:
TO-247A-3L
Product Description
Product Overview
The HY5110NA2W is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 100V and a continuous drain current of 295A, with a low on-state resistance of 2.4m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available. It is suitable for use in Battery Management Systems (BMS).
Product Attributes
- Brand: HY (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
- Package: TO-247A-3L
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | - | - | 100 | V |
| Gate-Source Voltage | VGSS | - | - | ±25 | ±25 | V |
| Maximum Junction Temperature | TJ | - | - | - | 175 | °C |
| Storage Temperature Range | TSTG | - | -55 | - | 175 | °C |
| Source Current-Continuous (Body Diode) | IS | Tc=25°C, Mounted on Large Heat Sink | - | - | 295 | A |
| Pulsed Drain Current | IDM | Tc=25°C, * | - | - | 1000* | A |
| Continuous Drain Current | ID | Tc=25°C | - | - | 295 | A |
| Continuous Drain Current | ID | Tc=100°C | - | - | 208 | A |
| Maximum Power Dissipation | PD | Tc=25°C | - | - | 500 | W |
| Maximum Power Dissipation | PD | Tc=100°C | - | - | 250 | W |
| Thermal Resistance, Junction-to-Case | RθJC | - | - | - | 0.3 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | ** | - | - | 40 | °C/W |
| Single Pulsed-Avalanche Energy | EAS | *** L=0.3mH | - | 2522.6 | - | mJ |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250μA | 100 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=100V,VGS=0V | - | - | 1.0 | μA |
| Drain-to-Source Leakage Current | IDSS | TJ=125°C | - | - | 50 | μA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250μA | 2 | 3 | 4 | V |
| Gate-Source Leakage Current | IGSS | VGS=±25V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance | RDS(ON)* | VGS=10V,IDS=100A | - | 2.4 | 3.2 | mΩ |
| Diode Forward Voltage | VSD* | ISD=100A,VGS=0V | - | 0.86 | 1.3 | V |
| Reverse Recovery Time | trr | ISD=100A,dISD/dt=100A/μs | - | 82.6 | - | ns |
| Reverse Recovery Charge | Qrr | - | - | 175.4 | - | nC |
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 0.75 | - | Ω |
| Input Capacitance | Ciss | VGS=0V, VDS=50V, Frequency=1.0MHz | - | 14818 | - | pF |
| Output Capacitance | Coss | - | - | 1112 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 638 | - | pF |
| Turn-on Delay Time | td(ON) | VDD=50V,RG=2.5Ω, IDS=100A,VGS=10V | - | 46.8 | - | ns |
| Turn-on Rise Time | Tr | - | - | 175.1 | - | ns |
| Turn-off Delay Time | td(OFF) | - | - | 115.5 | - | ns |
| Turn-off Fall Time | Tf | - | - | 184.8 | - | ns |
| Total Gate Charge | Qg | VDS=80V, VGS=10V ID=100A | - | 286.5 | - | nC |
| Gate-Source Charge | Qgs | - | - | 74.7 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 105.2 | - | nC |
2410121257_HUAYI-HY5110NA2W_C2837479.pdf
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