Single N Channel Enhancement Mode MOSFET HUAYI HYG180N10LS1D Featuring Low On Resistance for Power Management
Key Attributes
Model Number:
HYG180N10LS1D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+175℃
RDS(on):
30mΩ@6V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24.3pF
Number:
1 N-channel
Output Capacitance(Coss):
474pF
Input Capacitance(Ciss):
1.59nF
Pd - Power Dissipation:
71.4W
Gate Charge(Qg):
24.7nC@10V
Mfr. Part #:
HYG180N10LS1D
Package:
TO-252-2L
Product Description
HYG180N10LS1D Single N-Channel Enhancement Mode MOSFET
The HYG180N10LS1D is a single N-channel enhancement mode MOSFET designed for high-frequency point-of-load synchronous buck converter applications. It features a low on-resistance of 16m (typ.) at VGS = 10V and 24m (typ.) at VGS = 6V, 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant options are available.
Product Attributes
- Brand: HUAYI
- Model: HYG180N10LS1D
- Package Type: TO-252-2L
- Certifications: RoHS Compliant, Halogen-Free (Green)
- Origin: China
Technical Specifications
| Parameter | Test Conditions | Unit | Min | Typ. | Max | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage (VDSS) | V | 100 | ||||
| Gate-Source Voltage (VGSS) | V | ±20 | ||||
| Maximum Junction Temperature (TJ) | °C | 175 | ||||
| Storage Temperature Range (TSTG) | °C | -55 | 175 | |||
| Source Current-Continuous (IS) | Tc=25°C, Mounted on Large Heat Sink | A | 45 | |||
| Pulsed Drain Current (IDM) | Tc=25°C | A | 150 | |||
| Continuous Drain Current (ID) | Tc=25°C | A | 45 | |||
| Continuous Drain Current (ID) | Tc=100°C | A | 31 | |||
| Maximum Power Dissipation (PD) | Tc=25°C | W | 71.4 | |||
| Maximum Power Dissipation (PD) | Tc=100°C | W | 35.7 | |||
| Thermal Resistance, Junction-to-Case (RθJC) | °C/W | 2.1 | ||||
| Thermal Resistance, Junction-to-Ambient (RθJA) | Surface mounted on FR-4 board | °C/W | 110 | |||
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH | mJ | 62.1 | |||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250µA | V | 100 | - | - | |
| Drain-to-Source Leakage Current (IDSS) | VDS=100V,VGS=0V | µA | - | 1 | ||
| Drain-to-Source Leakage Current (IDSS) | TJ=100°C | µA | - | 50 | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250µA | V | 1.0 | 1.9 | 3.0 | |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | nA | - | 100 | ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=25A | mΩ | 16 | 21 | ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=6V,IDS=20A | mΩ | 24 | 30 | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage (VSD) | ISD=25A,VGS=0V | V | 0.94 | 1.3 | ||
| Reverse Recovery Time (trr) | ISD=25A,dISD/dt=100A/µs | ns | 46.5 | - | ||
| Reverse Recovery Charge (Qrr) | nC | 60.8 | - | |||
| Dynamic Characteristics | ||||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | Ω | 2.6 | - | ||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 1590 | - | ||
| Output Capacitance (Coss) | pF | 474 | - | |||
| Reverse Transfer Capacitance (Crss) | pF | 24.3 | - | |||
| Turn-on Delay Time (td(ON)) | VDD=50V,RG=2.5Ω, IDS=25A,VGS=10V | ns | 9.6 | - | ||
| Turn-on Rise Time (Tr) | ns | 31.9 | - | |||
| Turn-off Delay Time (td(OFF)) | ns | 20.8 | - | |||
| Turn-off Fall Time (Tf) | ns | 5.1 | - | |||
| Gate Charge Characteristics | ||||||
| Total Gate Charge (Qg(10V)) | VDS =80V, VGS=10V, ID=25A | nC | 24.7 | - | ||
| Total Gate Charge (Qg(4.5V)) | nC | 11.9 | - | |||
| Gate-Source Charge (Qgs) | nC | 6.9 | - | |||
| Gate-Drain Charge (Qgd) | nC | 3.5 | - | |||
2409302203_HUAYI-HYG180N10LS1D_C2842092.pdf
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