N Channel Enhancement Mode MOSFET HUAYI HYG025N06LS1P Designed for High Frequency Power Applications
Key Attributes
Model Number:
HYG025N06LS1P
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.2pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.915nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
58.3nC@10V
Mfr. Part #:
HYG025N06LS1P
Package:
TO-220FB-3
Product Description
Product Overview
The HYG025N06LS1P is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested for reliability, and a rugged construction. Halogen-free devices are available, complying with RoHS standards. This MOSFET is suitable for high frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Package Type: TO-220FB-3L
- Material Compliance: RoHS Compliant, Halogen-Free Devices Available
- Certifications: IPC/JEDEC J-STD-020 compliant for MSL classification
- Origin: China
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C | - | - | 60 | V |
| Gate-Source Voltage | VGSS | Tc=25C | - | ±20 | - | V |
| Maximum Junction Temperature | TJ | Tc=25C | - | - | 175 | �b0;C |
| Storage Temperature Range | TSTG | Tc=25C | -55 | - | 175 | �b0;C |
| Source Current-Continuous (Body Diode) | IS | Tc=25�b0;C, Mounted on Large Heat Sink | - | - | 160 | A |
| Pulsed Drain Current | IDM | Tc=25�b0;C, Pulse width limited by max. junction temperature | - | - | 620 | A |
| Continuous Drain Current | ID | Tc=25�b0;C | - | - | 160 | A |
| Continuous Drain Current | ID | Tc=100�b0;C | - | - | 113 | A |
| Maximum Power Dissipation | PD | Tc=25�b0;C | - | - | 125 | W |
| Maximum Power Dissipation | PD | Tc=100�b0;C | - | - | 62.5 | W |
| Thermal Resistance, Junction-to-Case | RθJC | - | - | 1.2 | - | �b0;C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | Surface mounted on FR-4 board | - | 62 | - | �b0;C/W |
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25�b0;C, L=0.3mH, VDS=48V, VGS=10V | - | 301.8 | - | mJ |
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250µA | 60 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=60V, VGS=0V | - | - | 1 | µA |
| Drain-to-Source Leakage Current | IDSS | TJ=100�b0;C | - | - | 50 | µA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250µA | 1.0 | 2.1 | 3.0 | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, IDS=40A | - | 2.5 | 3.2 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, IDS=40A | - | 3.7 | 4.5 | mΩ |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=40A, VGS=0V | - | 0.85 | 1.3 | V |
| Reverse Recovery Time | trr | ISD=40A, dISD/dt=100A/µs | - | 41.1 | - | ns |
| Reverse Recovery Charge | Qrr | - | - | 48.2 | - | nC |
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V, VDS=0V, F=1MHz | - | 0.58 | - | Ω |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 3915 | - | pF |
| Output Capacitance | Coss | - | - | 1310 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 10.2 | - | pF |
| Turn-on Delay Time | td(ON) | VDD=30V, RG=4Ω, IDS=40A, VGS=10V | - | 15.3 | - | ns |
| Turn-on Rise Time | Tr | - | - | 34 | - | ns |
| Turn-off Delay Time | td(OFF) | - | - | 33 | - | ns |
| Turn-off Fall Time | Tf | - | - | 9.4 | - | ns |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg(10V) | VDS=48V, VGS=10V, ID=40A | - | 58.3 | - | nC |
| Total Gate Charge | Qg(4.5V) | - | - | 27.7 | - | nC |
| Gate-Source Charge | Qgs | - | - | 15.7 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 9.7 | - | nC |
2409302203_HUAYI-HYG025N06LS1P_C2827232.pdf
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