Power Management MOSFET HUAYI HY3906P Featuring 60V Drain Source Voltage and 4 Milliohm On Resistance Typical
Key Attributes
Model Number:
HY3906P
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
190A
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
506pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.726nF
Output Capacitance(Coss):
1.014nF
Pd - Power Dissipation:
220W
Gate Charge(Qg):
135nC@10V
Mfr. Part #:
HY3906P
Package:
TO-220FB
Product Description
Product Overview
The HY3906P/B is an N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a 60V/190A rating with a low on-resistance of 4.0m (typ.) at VGS=10V. This device is reliable, rugged, and available in lead-free and green (RoHS compliant) versions. It is ideal for power management in inverter systems and switching applications, offering 100% avalanche tested reliability.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead Free
- Assembly Material: Lead Free and Green Devices Available
Technical Specifications
| Model | Package | Drain-Source Voltage (V) | Gate-Source Voltage (V) | Continuous Drain Current (A) TC=100C | RDS(ON) (m) Typ. @ VGS=10V | Maximum Power Dissipation (W) TC=100C | Avalanche Energy (mJ) |
| HY3906P/B | TO-263-2L | 60 | 25 | 128 | 4.0 | 110 | 720** |
| HY3906P/B | TO-220FB-3L | 60 | 25 | 128 | 4.0 | 110 | 720** |
2410121740_HUAYI-HY3906P_C358131.pdf
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