High Continuous Drain Current N Channel MOSFET HYG016N04LS1B Ideal for Battery and Inverter Systems
Key Attributes
Model Number:
HYG016N04LS1B
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
240A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
53pF
Number:
1 N-channel
Output Capacitance(Coss):
1.276nF
Input Capacitance(Ciss):
5.894nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
92.5nC@10V
Mfr. Part #:
HYG016N04LS1B
Package:
TO-263
Product Description
Product Overview
The HYG016N04LS1P/B is an N-Channel Enhancement Mode MOSFET designed for power management applications. It features low on-resistance, high continuous drain current capability, and is 100% avalanche tested for reliability. Available in lead-free and green (RoHS compliant) versions, it is suitable for DC/DC power management, battery management, and inverter systems.
Product Attributes
- Brand: HYM (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant
Technical Specifications
| Model | Feature | Parameter | Value | Unit |
| HYG016N04LS1P/B | General | Drain-Source Voltage (VDSS) | 40 | V |
| Gate-Source Voltage (VGSS) | ±20 | V | ||
| Junction Temperature Range (TJ) | -55 to 175 | °C | ||
| On-State Resistance (RDS(ON)) | VGS = 10V, IDS = 40A | 1.4 (typ.) | mΩ | |
| VGS = 4.5V, IDS = 40A | 1.8 (typ.) | mΩ | ||
| HYG016N04LS1P/B | Current Ratings | Continuous Drain Current (ID) @ Tc=25°C | 240 | A |
| Continuous Drain Current (ID) @ Tc=100°C | 170 | A | ||
| Pulsed Drain Current (IDM) @ Tc=25°C | 1000 | A | ||
| Source Current-Continuous (IS) @ Tc=25°C (Body Diode) | 240 | A | ||
| HYG016N04LS1P/B | Power Dissipation | Maximum Power Dissipation (PD) @ Tc=25°C | 200 | W |
| Maximum Power Dissipation (PD) @ Tc=100°C | 100 | W | ||
| Thermal Resistance, Junction-to-Case (RθJC) | 0.75 | °C/W | ||
| HYG016N04LS1P/B | Static Characteristics | Drain-Source Breakdown Voltage (BVDSS) | 40 | V |
| Gate Threshold Voltage (VGS(th)) | 1 (min) / 1.9 (typ.) / 3 (max) | V | ||
| Drain-Source On-State Resistance (RDS(ON)) | 1.4 (typ.) @ VGS=10V / 1.8 (typ.) @ VGS=4.5V | mΩ | ||
| HYG016N04LS1P/B | Dynamic Characteristics | Input Capacitance (Ciss) | 5894 (typ.) | pF |
| Output Capacitance (Coss) | 1276 (typ.) | pF | ||
| Reverse Transfer Capacitance (Crss) | 53 (typ.) | pF | ||
| HYG016N04LS1P/B | Gate Charge Characteristics | Total Gate Charge (Qg) @ VGS=10V | 92.5 (typ.) | nC |
| Total Gate Charge (Qg) @ VGS=4.5V | 43.6 (typ.) | nC | ||
| Gate-Source Charge (Qgs) | 22.7 (typ.) | nC | ||
| HYG016N04LS1P/B | Package Types | TO-220FB-3L | - | - |
| TO-263-2L | - | - |
2409302203_HUAYI-HYG016N04LS1B_C2843504.pdf
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