Single N Channel Enhancement Mode MOSFET HUAYI HY1920B 200V 72A Low On Resistance Device
Key Attributes
Model Number:
HY1920B
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
72A
RDS(on):
22mΩ@10V,45A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Reverse Transfer Capacitance (Crss@Vds):
257pF
Number:
1 N-channel
Pd - Power Dissipation:
268W
Input Capacitance(Ciss):
5.558nF
Gate Charge(Qg):
127nC@10V
Mfr. Part #:
HY1920B
Package:
TO-263-2L
Product Description
Product Overview
The HY1920B is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers a high breakdown voltage of 200V and a continuous drain current of 72A, with a low on-state resistance of 22m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available. It is also suitable for networking DC-DC power systems.
Product Attributes
- Brand: HYMEXA
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free Devices Available
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ. | Max | Unit | |
| HY1920B | Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | Tc=25C | 200 | V | |||
| VGSS | Gate-Source Voltage | 20 | V | ||||
| TJ | Maximum Junction Temperature | 175 | C | ||||
| TSTG | Storage Temperature Range | -55 | 175 | C | |||
| ID | Continuous Drain Current | Tc=25C | 72 | A | |||
| ID | Continuous Drain Current | Tc=100C | 51 | A | |||
| IDM | Pulsed Drain Current | Tc=25C | 350 | A | |||
| PD | Maximum Power Dissipation | Tc=25C | 268 | W | |||
| PD | Maximum Power Dissipation | Tc=100C | 134 | W | |||
| RJC | Thermal Resistance, Junction-to-Case | 0.56 | C/W | ||||
| RJA | Thermal Resistance, Junction-to-Ambient | Surface mounted on FR-4 board | 39.2 | C/W | |||
| EAS | Single Pulsed-Avalanche Energy | L=0.3mH | 908 | mJ | |||
| HY1920B | Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS=250A | 200 | V | |||
| IDSS | Drain-to-Source Leakage Current | VDS=200V,VGS=0V | 1 | A | |||
| IDSS | Drain-to-Source Leakage Current | TJ=100C | 50 | A | |||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | 2 | 2.8 | 4 | V | |
| IGSS | Gate-Source Leakage Current | VGS=20V,VDS=0V | 100 | nA | |||
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V,IDS=45A | 22 | 28 | m | ||
| VSD | Diode Forward Voltage | ISD=45A,VGS=0V | 0.85 | 1.3 | V | ||
| trr | Reverse Recovery Time | ISD=45A,dISD/dt=100A/s | 115 | ns | |||
| Qrr | Reverse Recovery Charge | 622 | nC | ||||
| HY1920B | Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 3 | ||||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | 5558 | pF | |||
| Coss | Output Capacitance | 471 | pF | ||||
| Crss | Reverse Transfer Capacitance | 257 | pF | ||||
| td(ON) | Turn-on Delay Time | VDD=100V,RG=2.5, IDS=45A,VGS=10V | 21 | ns | |||
| Tr | Turn-on Rise Time | 99 | ns | ||||
| td(OFF) | Turn-off Delay Time | 87.5 | ns | ||||
| Tf | Turn-off Fall Time | 105.2 | ns | ||||
| HY1920B | Gate Charge Characteristics | ||||||
| Qg(10V) | Total Gate Charge | VDS =160V, VGS=10V, ID=45A | 127 | nC | |||
| Qgs | Gate-Source Charge | 25.7 | nC | ||||
| HY1920B | Qgd | Gate-Drain Charge | 50.4 | nC | |||
2409302231_HUAYI-HY1920B_C5377757.pdf
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