power transistor HXY MOSFET IRG7PH46U-EP-HXY offering improved switching speed and thermal stability
Key Attributes
Model Number:
IRG7PH46U-EP-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
2.3mJ
Turn-On Energy (Eon):
1.3mJ
Input Capacitance(Cies):
3.98nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Mfr. Part #:
IRG7PH46U-EP-HXY
Package:
TO-247
Product Description
Product Overview
The IRG7PH46U-EP is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and robust performance, featuring a positive temperature coefficient, fast switching, low VCE(sat), and an operating temperature of up to 175. The device is AEC-Q101 Qualified and available in RoHS Compliant, Halogen Free, and Green options.
Product Attributes
- Brand: HUAXUANYANG
- Model: IRG7PH46U-EP
- Origin: HXY ELECTRONICS CO.,LTD
- Certifications: AEC-Q101 Qualified, RoHS Compliant
- Package Type: TO-247
- Unit Quantity: 30 per Tube
Technical Specifications
| Parameter | Value | Unit | Conditions |
| Key Characteristics | |||
| VCES | 1200 | V | |
| IC | 40 | A | |
| VCE(sat).typ | 1.70 | V | |
| Absolute Ratings | |||
| VCES | 1200 | V | |
| IC (Collector Current @TC=25C) | 80 | A | @TC=25C |
| IC (Collector Current @TC=100C) | 40 | A | @TC=100C |
| ICM (Pulsed Collector Current) | 160 | A | tp limited by TJmax |
| IF (Diode Continuous Forward Current @TC=25C) | 80 | A | @TC=25C |
| IF (Diode Continuous Forward Current @TC=100C) | 40 | A | @TC=100C |
| IFM (Diode Maximum Forward Current) | 160 | A | limited by TJmax |
| VGES (Gate-Emitter Voltage) | 30 | V | |
| tSC (Short circuit withstand time) | 13 | s | VGE=15V, VCC400V, allowed number of short circuits<1000, times between short circuits1.0s, TJ175C |
| PD (Power Dissipation @TC=25C) | 441 | W | @TC=25C |
| TJmax, Tstg (Operating Junction and Storage Temperature Range) | -55 to 175 | ||
| TL (Maximum Temperature for Soldering) | 260 | ||
| Thermal Characteristics | |||
| RJC (Junction-to-Case for IGBT) | 0.34 | /W | |
| RJC (Junction-to-Case for Diode) | 0.80 | /W | |
| RJA (Junction-to-Ambient) | 40 | /W | |
| Electrical Characteristics (Static) | |||
| VCES (Collector-Emitter Breakdown Voltage) | 1200 | V | VGE =0V, IC=1mA |
| VCE(sat) (Collector-Emitter Saturation Voltage) | 1.70 | V | VGE =15V, IC =40A, TJ=25 |
| VCE(sat) (Collector-Emitter Saturation Voltage) | 2.07 | V | VGE =15V, IC =40A, TJ=125 |
| VCE(sat) (Collector-Emitter Saturation Voltage) | 2.20 | V | VGE =15V, IC =40A, TJ=175 |
| VGE(TH) (Gate Threshold Voltage) | 4.3 - 6.3 | V | VCE=VGE,IC=1mA |
| VF (Diode Forward Voltage) | 1.85 | V | IF=40A, TJ=25 |
| VF (Diode Forward Voltage) | 1.70 | V | IF=40A, TJ=125 |
| VF (Diode Forward Voltage) | 1.61 | V | IF=40A, TJ=175 |
| ICES (Collector-Emitter Leakage Current) | 10 | A | VCE=1200V, VGE=0V |
| IGES(F) (Gate-Emitter Forward Leakage Current) | 200 | nA | VGE=+20V |
| IGES(R) (Gate-Emitter Reverse Leakage Current) | -200 | nA | VGE=-20V |
| Electrical Characteristics (Dynamic) | |||
| Cies (Input Capacitance) | 3980 | pF | VGE=0V, VCE=25V, f=1.0MHz |
| Coes (Output Capacitance) | 157 | pF | VGE=0V, VCE=25V, f=1.0MHz |
| Cres (Reverse Transfer Capacitance) | 93 | pF | VGE=0V, VCE=25V, f=1.0MHz |
| Qg (Gate charge) | 346 | nC | VCC=960V, ICE=40A, VGE=15V |
| IGBT Switching Characteristics (TJ=25) | |||
| td(on) (Turn-on Delay Time) | 25 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| tr (Rise Time) | 28 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| td(off) (Turn-Off Delay Time) | 262 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| tf (Fall Time) | 149 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| Eon (Turn-On Switching Loss) | 1.30 | mJ | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| Eoff (Turn-Off Switching Loss) | 2.30 | mJ | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| Ets (Total Switching Loss) | 3.60 | mJ | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| IGBT Switching Characteristics (TJ=175) | |||
| td(on) (Turn-on Delay Time) | 26 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| tr (Rise Time) | 35 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| td(off) (Turn-Off Delay Time) | 331 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| tf (Fall Time) | 224 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| Eon (Turn-On Switching Loss) | 2.20 | mJ | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| Eoff (Turn-Off Switching Loss) | 3.70 | mJ | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| Ets (Total Switching Loss) | 5.90 | mJ | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| Diode Characteristics (TJ=25) | |||
| Trr (Reverse Recovery Time) | 94 | ns | IF=40A, VCC=600V, di/dt=200A/s |
| Qrr (Reverse Recovery Charge) | 225 | nC | IF=40A, VCC=600V, di/dt=200A/s |
| Irrm (Reverse Recovery Current) | 9.7 | A | IF=40A, VCC=600V, di/dt=200A/s |
| Diode Characteristics (TJ=175) | |||
| Trr (Reverse Recovery Time) | 125 | ns | IF=40A, VCC=600V, di/dt=200A/s |
| Qrr (Reverse Recovery Charge) | 277 | nC | IF=40A, VCC=600V, di/dt=200A/s |
| Irrm (Reverse Recovery Current) | 11.2 | A | IF=40A, VCC=600V, di/dt=200A/s |
| Applications | |||
| PTC | Motor drives, OBC | ||
2509181738_HXY-MOSFET-IRG7PH46U-EP-HXY_C49003435.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
