Switching and Motor Control Applications Using HUAYI HYG065N07NS1B N Channel Enhancement Mode MOSFET
Product Overview
The HYG065N07NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems and motor control. It features low on-resistance, high continuous drain current, and is 100% avalanche tested for reliability and ruggedness. Lead-free and green devices are available, complying with RoHS standards.
Product Attributes
- Brand: HYMEXTA
- Origin: China
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020
- Material: Lead-Free and Green Devices Available
Technical Specifications
| Model | Parameter | Condition | Min | Typ. | Max | Unit |
| HYG065N07NS1 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS= 250A | 70 | - | - | V |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS= 250A | 2 | 3 | 4 | V | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS= 10V,IDS=40A | - | 5.5 | 6.5 | m | |
| Continuous Drain Current (ID) | Tc=25C | - | - | 100 | A | |
| Continuous Drain Current (ID) | Tc=100C | - | - | 70.7 | A | |
| Maximum Power Dissipation (PD) | Tc=25C | - | - | 125 | W | |
| Maximum Power Dissipation (PD) | Tc=100C | - | - | 62.5 | W | |
| Input Capacitance (Ciss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 2990 | - | pF | |
| Output Capacitance (Coss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 910 | - | pF | |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 26 | - | pF | |
| Total Gate Charge (Qg) | VDS = 56V, VGS= 10V, IDs= 20A | - | 52 | - | nC |
2410121248_HUAYI-HYG065N07NS1B_C2827241.pdf
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