Switching and Motor Control Applications Using HUAYI HYG065N07NS1B N Channel Enhancement Mode MOSFET

Key Attributes
Model Number: HYG065N07NS1B
Product Custom Attributes
Drain To Source Voltage:
70V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.99nF@25V
Pd - Power Dissipation:
125W
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
HYG065N07NS1B
Package:
TO-263-2L
Product Description

Product Overview

The HYG065N07NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems and motor control. It features low on-resistance, high continuous drain current, and is 100% avalanche tested for reliability and ruggedness. Lead-free and green devices are available, complying with RoHS standards.

Product Attributes

  • Brand: HYMEXTA
  • Origin: China
  • Certifications: RoHS Compliant, IPC/JEDEC J-STD-020
  • Material: Lead-Free and Green Devices Available

Technical Specifications

ModelParameterConditionMinTyp.MaxUnit
HYG065N07NS1Drain-Source Breakdown Voltage (BVDSS)VGS=0V,IDS= 250A70--V
Gate Threshold Voltage (VGS(th))VDS=VGS, IDS= 250A234V
Drain-Source On-State Resistance (RDS(ON))VGS= 10V,IDS=40A-5.56.5m
Continuous Drain Current (ID)Tc=25C--100A
Continuous Drain Current (ID)Tc=100C--70.7A
Maximum Power Dissipation (PD)Tc=25C--125W
Maximum Power Dissipation (PD)Tc=100C--62.5W
Input Capacitance (Ciss)VGS=0V, VDS= 25V, Frequency=1.0MHz-2990-pF
Output Capacitance (Coss)VGS=0V, VDS= 25V, Frequency=1.0MHz-910-pF
Reverse Transfer Capacitance (Crss)VGS=0V, VDS= 25V, Frequency=1.0MHz-26-pF
Total Gate Charge (Qg)VDS = 56V, VGS= 10V, IDs= 20A-52-nC

2410121248_HUAYI-HYG065N07NS1B_C2827241.pdf

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