switching HXY MOSFET NGTB40N120FL2WG-HXY IGBT with gate threshold voltage between 4.3 and 6.3 volts
Key Attributes
Model Number:
NGTB40N120FL2WG-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
Input Capacitance(Cies):
3.98nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
2.3mJ
Turn-On Energy (Eon):
1.3mJ
Mfr. Part #:
NGTB40N120FL2WG-HXY
Package:
TO-247
Product Description
Product Overview
The NGTB40N120FL2WG is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficient power management.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: NGTB40N120FL2WG
- Technology: Advanced Trench and Field Stop (T-FS)
- Certifications: AEC-Q101 Qualified, RoHS Compliant, Halogen Free and Green Devices Available
- Package Type: TO-247
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC | 40 | A | Collector Current @TC=100C |
| IC (25C) | 80 | A | Collector Current @TC=25C |
| ICM | 160 | A | Pulsed Collector Current, tp limited by TJmax |
| VCE(sat).typ | 1.70 | V | Collector-Emitter Saturation Voltage (Typ. @ IC=40A, TJ=25C) |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage (Typ. 5.3V) |
| PD (25C) | 441 | W | Power Dissipation @TC=25C |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case Thermal Resistance (IGBT) |
| RJC (Diode) | 0.80 | /W | Junction-to-Case Thermal Resistance (Diode) |
| RJA | 40 | /W | Junction-to-Ambient Thermal Resistance |
| Cies | 3980 | pF | Input Capacitance (Typ.) |
| Qg | 346 | nC | Gate Charge (Typ.) |
| td(on) | 25 | ns | Turn-on Delay Time (Typ. @ TJ=25C) |
| tr | 28 | ns | Rise Time (Typ. @ TJ=25C) |
| td(off) | 262 | ns | Turn-Off Delay Time (Typ. @ TJ=25C) |
| tf | 149 | ns | Fall Time (Typ. @ TJ=25C) |
| Eon | 1.30 | mJ | Turn-On Switching Loss (Typ. @ TJ=25C) |
| Eoff | 2.30 | mJ | Turn-Off Switching Loss (Typ. @ TJ=25C) |
| Ets | 3.60 | mJ | Total Switching Loss (Typ. @ TJ=25C) |
| Trr | 94 | ns | Reverse Recovery Time (Typ. @ TJ=25C) |
| Qrr | 225 | nC | Reverse Recovery Charge (Typ. @ TJ=25C) |
| Irrm | 9.7 | A | Reverse Recovery Current (Typ. @ TJ=25C) |
2509181738_HXY-MOSFET-NGTB40N120FL2WG-HXY_C49003416.pdf
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