N Channel Enhancement Mode MOSFET HUAYI HY3906B with 60 Volt 190 Amp Power Management Rating
Key Attributes
Model Number:
HY3906B
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
190A
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
220W
Gate Charge(Qg):
135nC@10V
Mfr. Part #:
HY3906B
Package:
TO-263-2L
Product Description
Product Overview
The HY3906P/B is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a 60V/190A rating and low on-resistance (RDS(ON) = 4.0m typ. @ VGS=10V). This device is reliable, rugged, and available in lead-free and green (RoHS compliant) versions. It has undergone 100% avalanche testing, ensuring robust operation.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead Free
- Material: Lead-free products contain molding compounds/die attach materials and 100% matte tin plate. Green products are lead-free (RoHS compliant) and halogen-free.
Technical Specifications
| Model | Package Type | Drain-Source Voltage (V) | Continuous Drain Current (A) | RDS(ON) (m) @ VGS=10V | Gate-Source Voltage (V) | Max. Junction Temperature (C) | Power Dissipation (W) |
| HY3906P/B | TO-263-2L | 60 | 190 (TC=25C) / 128 (TC=100C) | 4.0 (typ.) | 25 | 175 | 220 (TC=25C) / 110 (TC=100C) |
| HY3906P/B | TO-220FB-3L | 60 | 190 (TC=25C) / 128 (TC=100C) | 4.0 (typ.) | 25 | 175 | 220 (TC=25C) / 110 (TC=100C) |
2410121740_HUAYI-HY3906B_C358128.pdf
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