IGBT transistor HXY MOSFET IKW40N120CH7XKSA1-HXY for motor drives and onboard charger applications
Key Attributes
Model Number:
IKW40N120CH7XKSA1-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
2.3mJ
Turn-On Energy (Eon):
1.3mJ
Input Capacitance(Cies):
3.98nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Mfr. Part #:
IKW40N120CH7XKSA1-HXY
Package:
TO-247
Product Description
Product Overview
The IKW40N120CH7XKSA1 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficiency, such as motor drives and onboard chargers (OBC).
Product Attributes
- Brand: HUAXUANYANG
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Certifications: AEC-Q101 Qualified, Halogen Free and Green Devices Available (RoHS Compliant)
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC (@TC=25C) | 80 | A | Collector Current |
| IC (@TC=100C) | 40 | A | Collector Current |
| ICM | 160 | A | Pulsed Collector Current, tp limited by TJmax |
| VCE(sat).typ (@IC=40A, TJ=25C) | 1.70 | V | Collector-Emitter Saturation Voltage |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| PD (@TC=25C) | 441 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case (IGBT) |
| RJA | 40 | /W | Junction-to-Ambient |
| Package Type | TO-247 | ||
| Device Per Unit | 30 | Tube | Quantity |
2509181738_HXY-MOSFET-IKW40N120CH7XKSA1-HXY_C49003410.pdf
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