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quality HYG030N03LQ1D MOSFET Single N Channel Device with TO 252 2L Package and Performance Characteristics factory
quality HYG030N03LQ1D MOSFET Single N Channel Device with TO 252 2L Package and Performance Characteristics factory

HYG030N03LQ1D MOSFET Single N Channel Device with TO 252 2L Package and Performance Characteristics

Key Attributes
Model Number: HYG030N03LQ1D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
292pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.958nF
Pd - Power Dissipation:
57W
Gate Charge(Qg):
54.8nC@10V
Mfr. Part #:
HYG030N03LQ1D
Package:
TO-252-2L
Product Description

Product Overview

The HYG030N03LQ1D is a single N-Channel enhancement mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON)) of 2.5 m (typ.) at VGS = 10V and 3.5 m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available. Its robust design makes it suitable for demanding applications such as battery protection and motor drives.

Product Attributes

  • Brand: HYG (Huayi Microelectronics)
  • Product Code: HYG030N03LQ1D
  • Origin: China
  • Certifications: RoHS compliant (lead-free and halogen-free)
  • Package Type: TO-252-2L

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Absolute Maximum Ratings
Drain-Source VoltageVDSSTc=25 Unless Otherwise Noted--30V
Gate-Source VoltageVGSSTc=25 Unless Otherwise Noted--20V
Junction Temperature RangeTJTc=25 Unless Otherwise Noted-55-175
Storage Temperature RangeTSTGTc=25 Unless Otherwise Noted-55-175
Source Current-Continuous(Body Diode)ISTc=25, Mounted on Large Heat Sink--100A
Pulsed Drain CurrentIDMTc=25--390A
Continuous Drain CurrentIDTc=25--100A
Continuous Drain CurrentIDTc=100--71A
Maximum Power DissipationPDTc=25--57W
Maximum Power DissipationPDTc=100--28W
Thermal Resistance, Junction-to-CaseRJCTc=25 Unless Otherwise Noted-2.6-/W
Thermal Resistance, Junction-to-AmbientRJATc=25 Unless Otherwise Noted, Surface mounted on FR-4 board-110-/W
Single Pulsed Avalanche EnergyEASL=0.3mH, Limited by TJmax, starting TJ=25, RG=25, VGS=10V-148-mJ
Electrical Characteristics
Drain-Source Breakdown VoltageBVDSSVGS=0V, IDS=250A30--V
Drain-to-Source Leakage CurrentIDSSVDS=30V,VGS=0V--1A
Drain-to-Source Leakage CurrentIDSSTJ=125, VDS=30V,VGS=0V--50A
Gate Threshold VoltageVGS(th)VDS=VGS, IDS=250A11.33V
Gate-Source Leakage CurrentIGSSVGS=+20V/-20V,VDS=0V--100nA
Drain-Source On-State ResistanceRDS(ON)VGS=10V,IDS=30A-2.53m
Drain-Source On-State ResistanceRDS(ON)VGS=4.5V,IDS=30A-3.54.2m
Diode Characteristics
Diode Forward VoltageVSD*ISD=30A,VGS=0V-0.831.2V
Reverse Recovery TimetrrISD=30A,dISD/dt=100A/s-14.0-ns
Reverse Recovery ChargeQrrISD=30A,dISD/dt=100A/s-5.9-nC
Dynamic Characteristics
Gate ResistanceRGVGS=0V,VDS=0V,F=1MHz-3.9-
Input CapacitanceCissVGS=0V, VDS=25V, Frequency=1.0MHz-1958-pF
Output CapacitanceCossVGS=0V, VDS=25V, Frequency=1.0MHz-308-pF
Reverse Transfer CapacitanceCrssVGS=0V, VDS=25V, Frequency=1.0MHz-292-pF
Turn-on Delay Timetd(ON)VDD=24V,RG=4, IDS=30A,VGS=10V-9.1-ns
Turn-on Rise TimeTrVDD=24V,RG=4, IDS=30A,VGS=10V-70.2-ns
Turn-off Delay Timetd(OFF)VDD=24V,RG=4, IDS=30A,VGS=10V-42.8-ns
Turn-off Fall TimeTfVDD=24V,RG=4, IDS=30A,VGS=10V-90.2-ns
Gate Charge Characteristics
Total Gate ChargeQgVDS=24V, ID=30A, VGS=10V-54.8-nC
Total Gate ChargeQgVDS=24V, ID=30A, VGS=4.5V-29.7-nC
Gate-Source ChargeQgsVDS=24V, ID=30A, VGS=10V-6.6-nC
Gate-Drain ChargeQgdVDS=24V, ID=30A, VGS=10V-18.4-nC

2410121317_HUAYI-HYG030N03LQ1D_C2857463.pdf

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