Power Management MOSFET HYG080ND03LA1S Dual N Channel 30V 11A Halogen Free RoHS Compliant Component
Key Attributes
Model Number:
HYG080ND03LA1S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF
Number:
2 N-Channel
Input Capacitance(Ciss):
680pF@0V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
14.6nC@10V
Mfr. Part #:
HYG080ND03LA1S
Package:
SOP-8
Product Description
Product Overview
The HYG080ND03LA1S is a Dual N-Channel Enhancement Mode MOSFET designed for power management and switching applications. It offers low on-resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested for reliability, and is available in Halogen Free and Green (RoHS Compliant) versions. This MOSFET is suitable for DC/DC power management and general switching applications.
Product Attributes
- Brand: Hymexa
- Origin: Xi'an Huayi Microelectronics Co., Ltd.
- Certifications: RoHS Compliant, Halogen Free
- Package Type: SOP8L
Technical Specifications
| Model | Feature | RDS(ON) (typ.)@VGS = 10V | RDS(ON) (typ.)@VGS = 4.5V | VDSS | ID (Tc=25C) | PD (Tc=25C) | EAS (L=0.1mH) |
| HYG080ND03LA1S | Dual N-Channel Enhancement Mode MOSFET, 30V/11A, 100% Avalanche Tested, Reliable and Rugged, Halogen Free and Green Devices Available | 9.5 m | 12.5 m | 30 V | 11 A | 2.5 W | 12 mJ |
2409300604_HUAYI-HYG080ND03LA1S_C2904122.pdf
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