Single N Channel MOSFET HUAYI HYG017N04NR1B6 with 45V Drain Source Voltage and Halogen Free Options
Key Attributes
Model Number:
HYG017N04NR1B6
Product Custom Attributes
Drain To Source Voltage:
45V
Current - Continuous Drain(Id):
320A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.3mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
1.126nF
Number:
1 N-channel
Input Capacitance(Ciss):
6.382nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
161nC@10V
Mfr. Part #:
HYG017N04NR1B6
Package:
TO-263-6L
Product Description
Product Overview
The HYG017N04NR1B6 is a single N-Channel Enhancement Mode MOSFET from Hymexa. It features high current capability (45V/320A) with low on-resistance (RDS(ON) = 1.3 m typ. @VGS = 10V). This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available. It is suitable for applications such as load switches and lithium battery protection boards.
Product Attributes
- Brand: Hymexa
- Model: HYG017N04NR1B6
- Package: TO-263-6L
- Certifications: RoHS compliant, Halogen-Free options available
Technical Specifications
| Symbol | Parameter | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | 45 | |||
| VGSS | Gate-Source Voltage | V | 25 | |||
| TJ | Junction Temperature Range | -55 | 175 | |||
| TSTG | Storage Temperature Range | -55 | 175 | |||
| IS | Source Current-Continuous(Body Diode) | Tc=25 | A | 320 | ||
| IDM | Pulsed Drain Current * | Tc=25 | A | 850 | ||
| ID | Continuous Drain Current | Tc=25 | A | 320 | ||
| ID | Continuous Drain Current | Tc=100 | A | 225 | ||
| PD | Maximum Power Dissipation | Tc=25 | W | 300 | ||
| PD | Maximum Power Dissipation | Tc=100 | W | 150 | ||
| RJC | Thermal Resistance, Junction-to-Case | /W | 0.5 | |||
| RJA | Thermal Resistance, Junction-to-Ambient ** | /W | 40.0 | |||
| EAS | Single Pulsed-Avalanche Energy *** | L=0.3mH | mJ | 905 | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS=250A | V | 45 | - | - |
| IDSS | Drain-to-Source Leakage Current | VDS=45V,VGS=0V | A | - | 1 | |
| IDSS | Drain-to-Source Leakage Current | TJ=125 | A | - | 50 | |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | V | 2 | 2.8 | 4 |
| IGSS | Gate-Source Leakage Current | VGS=25V,VDS=0V | nA | - | 100 | |
| RDS(ON)* | Drain-Source On-State Resistance | VGS=10V,IDS=40A | m | 1.3 | 1.6 | |
| VSD* | Diode Forward Voltage | ISD=40A,VGS=0V | V | 0.8 | 1.0 | |
| trr | Reverse Recovery Time | ISD=20A,dISD/dt=100A/s | ns | 36 | - | |
| Qrr | Reverse Recovery Charge | nC | 39 | - | ||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 6382 | - | |
| Coss | Output Capacitance | pF | 1232 | - | ||
| Crss | Reverse Transfer Capacitance | pF | 1126 | - | ||
| td(ON) | Turn-on Delay Time | VDD=20V,RG=4, IDS=20A,VGS=10V | ns | 25 | - | |
| Tr | Turn-on Rise Time | ns | 73 | - | ||
| td(OFF) | Turn-off Delay Time | ns | 66 | - | ||
| Tf | Turn-off Fall Time | ns | 79 | - | ||
| Qg | Total Gate ChargeVGS=10V | VDS =32V, VGS=10V, ID=20A | nC | 161 | - | |
| Qgs | Gate-Source Charge | nC | 26 | - | ||
| Qgd | Gate-Drain Charge | nC | 78 | - | ||
2410122028_HUAYI-HYG017N04NR1B6_C5121305.pdf
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