Power Switching MOSFET HUAYI HYG055N08NS1P N Channel Enhancement Mode for Industrial Applications
Key Attributes
Model Number:
HYG055N08NS1P
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
6.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.66nF@25V
Pd - Power Dissipation:
187.5W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
HYG055N08NS1P
Package:
TO-220FB-3
Product Description
HYG055N08NS1P/B N-Channel Enhancement Mode MOSFET
The HYG055N08NS1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers a robust and reliable solution with key advantages including low on-state resistance (RDS(ON)=5.3 m typ. @VGS = 10V), 100% avalanche tested, and lead-free/green device availability (RoHS compliant).
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Parameter | Condition | Value | Unit |
| Absolute Maximum Ratings | Drain-Source Voltage (VDSS) | 80 | V |
| Gate-Source Voltage (VGSS) | ±20 | V | |
| Junction Temperature (TJ) | -55 to 175 | °C | |
| Storage Temperature (TSTG) | -55 to 175 | °C | |
| Electrical Characteristics (Tc=25°C Unless Otherwise Noted) | Drain-Source On-State Resistance (RDS(ON)) | 5.3 (typ.) | mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 - 4 | V | |
| Drain-Source Breakdown Voltage (BVDSS) | 80 | V | |
| Continuous Drain Current (ID) @ Tc=25°C | 120 | A | |
| Continuous Drain Current (ID) @ Tc=100°C | 84.8 | A | |
| Dynamic Characteristics | Input Capacitance (Ciss) | 3660 (typ.) | pF |
| Output Capacitance (Coss) | 1540 (typ.) | pF | |
| Reverse Transfer Capacitance (Crss) | 15 (typ.) | pF | |
| Gate Charge Characteristics | Total Gate Charge (Qg) | 60 (typ.) | nC |
| Gate-Source Charge (Qgs) | 20 (typ.) | nC | |
| Diode Characteristics | Diode Forward Voltage (VSD) @ ISD=50A | 0.92 - 1.2 | V |
| Thermal Resistance | Junction-to-Case (RθJC) | 0.8 | °C/W |
| Junction-to-Ambient (RθJA) (1in² FR-4) | 62.5 (typ.) | °C/W |
2410121248_HUAYI-HYG055N08NS1P_C2892077.pdf
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