Power switching n channel enhancement mode mosfet HUAYI HYG028N10NS1P with 100 volt 230 amp capability
Key Attributes
Model Number:
HYG028N10NS1P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
230A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
3.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
242pF
Number:
1 N-channel
Output Capacitance(Coss):
3.454nF
Input Capacitance(Ciss):
10.32nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
176nC@10V
Mfr. Part #:
HYG028N10NS1P
Package:
TO-220FB-3L
Product Description
HYG028N10NS1/B N-Channel Enhancement Mode MOSFET
The HYG028N10NS1/B is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a robust and reliable solution with key advantages such as 100V/230A capability, low on-resistance (RDS(ON)=2.6m typ. @ VGS = 10V), and 100% avalanche tested. This device is also available in Lead-Free and Green (RoHS Compliant) versions, making it suitable for environmentally conscious designs. Applications include power switching, uninterruptible power supplies (UPS), and motor control.
Product Attributes
- Brand: HYMEXTM (HUAYI)
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Parameter | Test Conditions | Value | Unit |
|---|---|---|---|
| Absolute Maximum Ratings | |||
| Drain-Source Voltage (VDSS) | 100 | V | |
| Gate-Source Voltage (VGSS) | 20 | V | |
| Maximum Junction Temperature (TJ) | -55 to 175 | C | |
| Storage Temperature Range (TSTG) | -55 to 175 | C | |
| Source Current-Continuous (IS) (Body Diode, Tc=25C, Mounted on Large Heat Sink) | 230 | A | |
| Pulsed Drain Current (IDM) (Tc=25C) | 610 | A | |
| Continuous Drain Current (ID) (Tc=25C) | 230 | A | |
| Continuous Drain Current (ID) (Tc=100C) | 162 | A | |
| Maximum Power Dissipation (PD) (Tc=25C) | 300 | W | |
| Maximum Power Dissipation (PD) (Tc=100C) | 150 | W | |
| Thermal Resistance, Junction-to-Case (RJC) | 0.5 | C/W | |
| Thermal Resistance, Junction-to-Ambient (RJA) | (Surface mounted on FR-4 board) | 62 | C/W |
| Single Pulsed-Avalanche Energy (EAS) (L=0.3mH) | 980.7 | mJ | |
| Electrical Characteristics | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 100 | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=100V,VGS=0V | - | 1.0 A |
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | - | 50 A |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 2 - 4 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | - | 100 nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=50A | - 2.6 3.3 | m |
| Diode Forward Voltage (VSD) | ISD=50A,VGS=0V | - 0.86 1.3 | V |
| Reverse Recovery Time (trr) | ISD=50A,dISD/dt=100A/s | - 86.5 | ns |
| Reverse Recovery Charge (Qrr) | - 208.8 | nC | |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - 10320 | pF |
| Output Capacitance (Coss) | - 3454 | pF | |
| Reverse Transfer Capacitance (Crss) | - 242 | pF | |
| Turn-on Delay Time (td(ON)) | VDD=50V,RG=2.5, IDS=50A,VGS=10V | - 27.3 | ns |
| Turn-on Rise Time (Tr) | - 103.7 | ns | |
| Turn-off Delay Time (td(OFF)) | - 92.8 | ns | |
| Turn-off Fall Time (Tf) | - 100.8 | ns | |
| Total Gate Charge (Qg) | VDS=80V, VGS=10V, ID=50A | - 176 | nC |
| Gate-Source Charge (Qgs) | - 56 | - | |
| Gate-Drain Charge (Qgd) | - 48 | - | |
2409302203_HUAYI-HYG028N10NS1P_C2932575.pdf
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