Power Switching Device HUAYI HY1904B MOSFET with Low On Resistance and High Avalanche Energy Rating
Key Attributes
Model Number:
HY1904B
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF
Number:
1 N-channel
Output Capacitance(Coss):
194pF
Input Capacitance(Ciss):
2.274nF
Pd - Power Dissipation:
100W
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
HY1904B
Package:
TO-263-2L
Product Description
Product Overview
The HY1904P/B/M is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It features a high continuous drain current of 90A and a low on-resistance of 4.7m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Material: Molding compounds/die attach materials and 100% matte tin plate termination finish (for lead-free products)
Technical Specifications
| Model | Package | VDSS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | RDS(ON) (m) @ VGS=4.5V | Avalanche Energy (mJ) | Package Code |
|---|---|---|---|---|---|---|---|
| HY1904P | TO-220FB-3L | 40 | 90 | 4.7 (typ.) | 5.7 (typ.) | 184 (L=0.3mH) | P |
| HY1904B | TO-263-2L | 40 | 90 | 4.7 (typ.) | 5.7 (typ.) | 184 (L=0.3mH) | B |
| HY1904M | TO-220FB-3S | 40 | 90 | 4.7 (typ.) | 5.7 (typ.) | 184 (L=0.3mH) | M |
2410121713_HUAYI-HY1904B_C2837263.pdf
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