High voltage HXY MOSFET AFGHL40T65SPD-HXY optimized for UPS EV Chargers and energy storage inverters
Key Attributes
Model Number:
AFGHL40T65SPD-HXY
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
136ns
Td(on):
26ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
1.52nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.25mA
Gate Charge(Qg):
57nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
56ns
Switching Energy(Eoff):
430uJ
Turn-On Energy (Eon):
900uJ
Mfr. Part #:
AFGHL40T65SPD-HXY
Package:
TO-247
Product Description
Product Overview
The AFGHL40T65SPD is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for applications such as UPS, EV-Chargers, and Energy Storage Inverters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Model: AFGHL40T65SPD
- Package: TO-247
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 650 | V | |||
| IC | DC collector current(1) | TC = 25C | 70 | A | ||
| IC | DC collector current(1) | TC = 100C | 40 | A | ||
| ICM | Pulsed collector current | TC = 25C | 160 | A | ||
| IF | Maximum Diode forward current(1) | TC = 25C | 70 | A | ||
| IF | Maximum Diode forward current(1) | TC = 100C | 40 | A | ||
| IFM | Diode pulsed current | TC = 25C | 160 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| VGE | Transient Gate-Emitter Voltage | (tp 10s, D < 0.010) TVJ = 25C | 30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 250 | W | ||
| Ptot | Power Dissipation | TC = 100C | 125 | W | ||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Resistance | ||||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |||
| RJC | IGBT Thermal resistance: junction - case | IGBT | 0.6 | C/W | ||
| RJC | Diode Thermal resistance: junction - case | Diode | 0.65 | C/W | ||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A | 1.6 | 2.1 | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A ,TVJ = 125C | 1.85 | - | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A ,TVJ = 175C | 1.95 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC =40A | 1.8 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC =40A ,TVJ = 125C | 1.5 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 40A ,TVJ = 175C | 1.35 | - | V | |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 3.2 | 4 | 4.8 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | 40 | mA | |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | 100 | nA | |
| gfs | Transconductance | VGE =15V, IC = 40A | 55 | - | S | |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 1520 | - | pF | |
| Coes | Output Capacitance | 110 | - | pF | ||
| Cres | Reverse Transfer Capacitance | 11 | - | pF | ||
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 40A | 57 | - | nC | |
| Qge | Gate to Emitter charge | 6.5 | - | nC | ||
| Qgc | Gate to Collector charge | 17.5 | - | nC | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On DelayTime | VGE = 15V, VCC = 400V IC= 40A, RG(on) =15,RG(off) =15 | 26 | - | ns | |
| tr | Turn-On Rise Time | 28 | - | ns | ||
| td(off) | Turn-Off DelayTime | 136 | - | ns | ||
| tf | Turn-Off Fall Time | 34 | - | ns | ||
| Eon | Turn-on energy | 0.9 | - | mJ | ||
| Eoff | Turn-off energy | 0.43 | - | mJ | ||
| Ets | Total switching energy | 1.33 | - | mJ | ||
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 400 V, IF = 40 A, di/dt = 400 A/S | 56 | - | ns | |
| Qrr | Reverse recovery charge | 0.27 | - | mC | ||
| Irrm | Peak reverse recovery current | 8.0 | - | A | ||
2509181737_HXY-MOSFET-AFGHL40T65SPD-HXY_C49003317.pdf
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