Power management device single n channel enhancement mode mosfet HUAYI HYG082N03LR1C1 rohs compliant
Key Attributes
Model Number:
HYG082N03LR1C1
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
32A
Operating Temperature -:
-55℃~+175℃
RDS(on):
13.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 N-channel
Output Capacitance(Coss):
108pF
Input Capacitance(Ciss):
787pF
Pd - Power Dissipation:
21.4W
Gate Charge(Qg):
14.8nC@10V
Mfr. Part #:
HYG082N03LR1C1
Package:
DFN3x3-8L
Product Description
HYG082N03LR1C1 - Single N-Channel Enhancement Mode MOSFET
The HYG082N03LR1C1 is a single N-Channel enhancement mode MOSFET designed for power management and switching applications. It offers high performance with low on-resistance and is 100% avalanche tested for reliability. This device is available in Halogen Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Material: Lead-free (RoHS Compliant), Halogen Free
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 MSL Classification
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | 30 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Maximum Junction Temperature | TJ | -55 | 175 | C | ||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
| Source Current-Continuous (Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | 32 | A | ||
| Pulsed Drain Current | IDM | Tc=25C* | 115 | A | ||
| Continuous Drain Current | ID | Tc=25C | 32 | A | ||
| Continuous Drain Current | ID | Tc=100C | 22.6 | A | ||
| Maximum Power Dissipation | PD | Tc=25C | 21.4 | W | ||
| Maximum Power Dissipation | PD | Tc=100C | 10.7 | W | ||
| Thermal Resistance, Junction-to-Case | RJC | 7 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | ** | 75 | C/W | ||
| Single Pulsed-Avalanche Energy | EAS | *** | 12 | mJ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250A | 30 | V | ||
| Drain-to-Source Leakage Current | IDSS | VDS=30V,VGS=0V | 1 | A | ||
| Drain-to-Source Leakage Current | IDSS | TJ=125C | 50 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 1 | 1.8 | 3 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=10A* | 7.0 | 9.0 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=10A* | 10.5 | 13.5 | m | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=10A,VGS=0V* | 0.8 | 1.2 | V | |
| Reverse Recovery Time | trr | ISD=10A,dISD/dt=100A/s | 9 | ns | ||
| Reverse Recovery Charge | Qrr | 10 | nC | |||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V, Frequency=1.0MHz | 2.5 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | 787 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | 108 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | 65 | pF | ||
| Turn-on Delay Time | td(ON) | VDD=10V,RG=4, IDS=10A,VGS=10V | 4 | ns | ||
| Turn-on Rise Time | Tr | VDD=10V,RG=4, IDS=10A,VGS=10V | 8 | ns | ||
| Turn-off Delay Time | td(OFF) | VDD=10V,RG=4, IDS=10A,VGS=10V | 14 | ns | ||
| Turn-off Fall Time | Tf | VDD=10V,RG=4, IDS=10A,VGS=10V | 5 | ns | ||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS =24V, VGS=10V, ID=10A | 14.8 | nC | ||
| Gate-Source Charge | Qgs | VDS =24V, VGS=10V, ID=10A | 2.1 | nC | ||
| Gate-Drain Charge | Qgd | VDS =24V, VGS=10V, ID=10A | 3.4 | nC | ||
*Pulse testpulse width 300usduty cycle 2%
**Surface mounted on 1in FR-4 board.
***Limited by TJmax , starting TJ=25C, L = 0.1mH, RG= 25, VGS =10V.
2410121306_HUAYI-HYG082N03LR1C1_C2827246.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
