Power MOSFET HUAYI HY3810B N Channel 100V 180A rating low RDS ON for inverter and switching systems
Key Attributes
Model Number:
HY3810B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
180A
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
631pF
Number:
1 N-channel
Input Capacitance(Ciss):
7.889nF
Output Capacitance(Coss):
1.013nF
Pd - Power Dissipation:
346W
Gate Charge(Qg):
185nC@10V
Mfr. Part #:
HY3810B
Package:
TO-263-2L
Product Description
Product Overview
The HY3810 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a 100V/180A rating and a low RDS(ON) of 5.0 m (typ.) at VGS=10V. This device is reliable, rugged, and available in lead-free and green (RoHS compliant) options. It is 100% avalanche tested.
Product Attributes
- Brand: HUAYI
- Origin: China
- Material: Lead Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | Drain-Source Voltage | TC=25C Unless Otherwise Noted | 100 | V | ||
| Gate-Source Voltage | ±25 | V | ||||
| Maximum Junction Temperature | 175 | °C | ||||
| Storage Temperature Range | -55 | 175 | °C | |||
| Diode Continuous Forward Current | IS (TC=25°C) | Mounted on Large Heat Sink | 180 | A | ||
| Continuous Drain Current | ID (TC=100°C) | 132 | A | |||
| Maximum Power Dissipation | PD (TC=100°C) | 173 | W | |||
| Thermal Resistance-Junction to Case | RθJC | 0.43 | °C/W | |||
| Thermal Resistance-Junction to Ambient | RθJA | 62.5 | °C/W | |||
| Electrical Characteristics | Drain-Source Breakdown Voltage | BVDSS (VGS=0V, IDS=250µA) | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS (VDS=100V, VGS=0V) | 1 | µA | |||
| Gate Threshold Voltage | VGS(th) (VDS=VGS, IDS=250µA) | 2.0 | 3.0 | 4.0 | V | |
| Gate Leakage Current | IGSS (VGS=±25V, VDS=0V) | ±100 | nA | |||
| Drain-Source On-state Resistance | RDS(ON) (VGS=10V, IDS=90A) | 5.0 | 6.5 | mΩ | ||
| Diode Forward Voltage | VSD (ISD=90A, VGS=0V) | 0.8 | 1 | V | ||
| Reverse Recovery Time | trr (ISD=90A, dlSD/dt=100A/µs) | 65 | ns | |||
| Dynamic Characteristics | Gate Resistance | RG (VGS=0V,VDS=0V,F=1MHz) | 2.3 | Ω | ||
| Input Capacitance | Ciss (VGS=0V, VDS=25V, Frequency=1.0MHz) | 7889 | pF | |||
| Output Capacitance | Coss (VGS=0V, VDS=25V, Frequency=1.0MHz) | 1013 | pF | |||
| Reverse Transfer Capacitance | Crss (VGS=0V, VDS=25V, Frequency=1.0MHz) | 631 | pF | |||
| Turn-on Delay Time | td(ON) (VDD=50V, RG= 6 Ω, IDS =90A, VGS=10V) | 28 | ns | |||
| Gate Charge Characteristics | Total Gate Charge | Qg (VDS=80V, VGS=10V, IDS=90A) | 185 | nC | ||
| Gate-Source Charge | Qgs (VDS=80V, VGS=10V, IDS=90A) | 34 | nC | |||
| Gate-Drain Charge | Qgd (VDS=80V, VGS=10V, IDS=90A) | 60 | nC |
2410121913_HUAYI-HY3810B_C357990.pdf
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