60 Volt 66 Amp N Channel MOSFET HUAYI HY1606B for Power Management and Switching Applications
Key Attributes
Model Number:
HY1606B
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
66A
Operating Temperature -:
-55℃~+175℃
RDS(on):
12.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
376pF
Number:
1 N-channel
Output Capacitance(Coss):
764pF
Input Capacitance(Ciss):
2.068nF
Pd - Power Dissipation:
88W
Gate Charge(Qg):
51nC@10V
Mfr. Part #:
HY1606B
Package:
TO-263-2L
Product Description
Product Overview
The HY1606P/B is an N-Channel Enhancement Mode MOSFET designed for power management and switching applications, particularly in inverter systems. It offers a robust and reliable performance with a 60V/66A rating and low on-state resistance. Available in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: HUAYI
- Origin: China
- Material: Lead Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, J-STD-020
Technical Specifications
| Model | Parameter | Rating | Unit | Conditions |
| HY1606P/B | Drain-Source Voltage (VDSS) | 60 | V | |
| Gate-Source Voltage (VGSS) | ±25 | V | ||
| Maximum Junction Temperature (TJ) | 175 | °C | ||
| Storage Temperature Range (TSTG) | -55 to 175 | °C | ||
| Continuous Drain Current (ID) | 66 | A | TC=25°C | |
| Continuous Drain Current (ID) | 50 | A | TC=100°C | |
| Maximum Power Dissipation (PD) | 88 | W | TC=25°C | |
| Maximum Power Dissipation (PD) | 44 | W | TC=100°C | |
| HY1606P/B | Drain-Source Breakdown Voltage (BVDSS) | 60 | V | VGS=0V, IDS=250µA |
| Zero Gate Voltage Drain Current (IDSS) | 1 | µA | VDS=60V, VGS=0V, TJ=85°C | |
| Gate Threshold Voltage (VGS(th)) | 2 to 4 | V | VDS=VGS, IDS=250µA | |
| Gate Leakage Current (IGSS) | ±100 | nA | VGS=±25V, VDS=0V | |
| Drain-Source On-state Resistance (RDS(ON)) | 10.4 (typ.) | mΩ | VGS=10V, IDS=33A | |
| Drain-Source On-state Resistance (RDS(ON)) | 12.5 | mΩ | VGS=10V, IDS=33A | |
| HY1606P/B | Diode Forward Voltage (VSD) | 0.8 to 1 | V | ISD=33A, VGS=0V |
| Reverse Recovery Time (trr) | 33 | ns | ||
| Reverse Recovery Charge (Qrr) | 61 | nC | ISD=33A, dlSD/dt=100A/µs | |
| HY1606P/B | Input Capacitance (Ciss) | 2068 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz |
| Output Capacitance (Coss) | 764 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | |
| Reverse Transfer Capacitance (Crss) | 376 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | |
| Total Gate Charge (Qg) | 51 | nC | VDS=48V, VGS=10V, IDS=33A |
2410121341_HUAYI-HY1606B_C2757853.pdf
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