Power switching N Channel MOSFET HUAYI HY3208NA3P 80 Volt 120 Ampere with avalanche tested reliability
Key Attributes
Model Number:
HY3208NA3P
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
205pF
Number:
1 N-channel
Output Capacitance(Coss):
460pF
Input Capacitance(Ciss):
3.15nF
Pd - Power Dissipation:
208W
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
HY3208NA3P
Package:
TO-220FB-3
Product Description
Product Overview
The HYG3208NA3P/B is an N-Channel MOSFET designed for switching applications and power management in inverter systems. It features a high current capability of 80V/120A, low on-resistance (RDS(ON) = 7m typ. @ VGS = 10V), and is 100% avalanche tested for reliability and ruggedness. Lead-free and green device options are available, compliant with RoHS standards.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 (MSL classification)
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 80 | V | |||
| VGSS | Gate-Source Voltage | ±25 | V | |||
| TJ | Junction Temperature Range | -55 | 175 | °C | ||
| TSTG | Storage Temperature Range | -55 | 175 | °C | ||
| IS | Source Current-Continuous(Body Diode) | Tc=25°C, Mounted on Large Heat Sink | 120 | A | ||
| IDM | Pulsed Drain Current | Tc=25°C | 340 | A | ||
| ID | Continuous Drain Current | Tc=25°C | 120 | A | ||
| ID | Continuous Drain Current | Tc=100°C | 84.8 | A | ||
| PD | Maximum Power Dissipation | Tc=25°C | 208 | W | ||
| PD | Maximum Power Dissipation | Tc=100°C | 104 | W | ||
| RθJC | Thermal Resistance, Junction-to-Case | 0.72 | °C/W | |||
| RθJA | Thermal Resistance, Junction-to-Ambient | Surface mounted on 1in² FR-4 board. | 62.5 | °C/W | ||
| EAS | Single Pulsed-Avalanche Energy | L=0.3mH, Starting TJ=25°C, VDS=64V, VGS =10V | 436 | mJ | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS= 250µA | 80 | - | - | V |
| IDSS | Drain-to-Source Leakage Current | VDS= 80V,VGS=0V | - | - | 1 | µA |
| IDSS | Drain-to-Source Leakage Current | TJ=125°C | - | - | 50 | µA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS= 250µA | 2 | 3 | 4 | V |
| IGSS | Gate-Source Leakage Current | VGS=±25V,VDS=0V | - | - | ±100 | nA |
| RDS(ON) | Drain-Source On-State Resistance | VGS= 10V,IDS= 40A | - | 7 | 8.5 | mΩ |
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | ISD=40A,VGS=0V | - | 0.83 | 1.2 | V |
| trr | Reverse Recovery Time | ISD=40A,dISD/dt=100A/μs | - | 42 | - | ns |
| Qrr | Reverse Recovery Charge | - | 88 | - | nC | |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | - | 1.7 | - | Ω |
| Ciss | Input Capacitance | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 3150 | - | pF |
| Coss | Output Capacitance | - | 460 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 205 | - | pF | |
| td(ON) | Turn-on Delay Time | VDD= 40V,RG=4Ω, IDS= 20A,VGS= 10V | - | 18 | - | ns |
| tr | Turn-on Rise Time | - | 84 | - | ns | |
| td(OFF) | Turn-off Delay Time | - | 32 | - | ns | |
| tf | Turn-off Fall Time | - | 59 | - | ns | |
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS =64V, VGS= 10V, IDS= 20A | - | 65 | - | nC |
| Qgs | Gate-Source Charge | - | 19 | - | nC | |
| Qgd | Gate-Drain Charge | - | 25 | - | nC | |
2410121547_HUAYI-HY3208NA3P_C2687414.pdf
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