High voltage IGBT module HXY MOSFET RGS80TSX2HRC11-HXY with fast switching and low conduction losses
Key Attributes
Model Number:
RGS80TSX2HRC11-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
2.3mJ
Turn-On Energy (Eon):
1.3mJ
Input Capacitance(Cies):
3.98nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Mfr. Part #:
RGS80TSX2HRC11-HXY
Package:
TO-247
Product Description
Product Overview
The RGS80TSX2HRC11 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficiency, featuring a positive temperature coefficient, fast switching speeds, low VCE(sat), and a rugged construction. The device is AEC-Q101 qualified and operates at temperatures up to 175, with Halogen Free and Green Device options available (RoHS Compliant).
Product Attributes
- Brand: HUAXUANYANG
- Manufacturer: HXY ELECTRONICS CO.,LTD
- Model: RGS80TSX2HRC11
- Technology: Trench and Field Stop (T-FS)
- Package Type: TO-247
- Certifications: AEC-Q101 Qualified, RoHS Compliant
- Availability: Halogen Free and Green Devices Available
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC (@TC=25C) | 80 | A | Collector Current |
| IC (@TC=100C) | 40 | A | Collector Current |
| ICM | 160 | A | Pulsed Collector Current (tp limited by TJmax) |
| VCE(sat).typ (@IC=40A, TJ=25C) | 1.70 | V | Collector-Emitter Saturation Voltage |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| PD (@TC=25C) | 441 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case Thermal Resistance |
| RJA | 40 | /W | Junction-to-Ambient Thermal Resistance |
| Cies | 3980 | pF | Input Capacitance (@VGE=0V, VCE=25V, f=1.0MHz) |
| Qg | 346 | nC | Gate Charge (@VCC=960V, ICE=40A, VGE=15V) |
| td(on) (@TJ=25C) | 25 | ns | Turn-on Delay Time |
| tr (@TJ=25C) | 28 | ns | Rise Time |
| td(off) (@TJ=25C) | 262 | ns | Turn-Off Delay Time |
| tf (@TJ=25C) | 149 | ns | Fall Time |
| Eon (@TJ=25C) | 1.30 | mJ | Turn-On Switching Loss |
| Eoff (@TJ=25C) | 2.30 | mJ | Turn-Off Switching Loss |
| Ets (@TJ=25C) | 3.60 | mJ | Total Switching Loss |
| Trr (@TJ=25C) | 94 | ns | Reverse Recovery Time (Diode) |
| Qrr (@TJ=25C) | 225 | nC | Reverse Recovery Charge (Diode) |
| Irrm (@TJ=25C) | 9.7 | A | Reverse Recovery Current (Diode) |
2509181738_HXY-MOSFET-RGS80TSX2HRC11-HXY_C49003433.pdf
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