Low On Resistance HUAYI HY1103S MOSFET 30V 11A N Channel Enhancement Mode for Power Circuits
Key Attributes
Model Number:
HY1103S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
115pF
Number:
1 N-channel
Output Capacitance(Coss):
184pF
Input Capacitance(Ciss):
1.05nF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
29nC@10V
Mfr. Part #:
HY1103S
Package:
SOP-8
Product Description
Product Overview
The HY1103S is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a 30V/11A rating with low on-resistance of 9.5m (typ.) at VGS = 10V and 11.5m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: HYMEXA
- Origin: China (Xi'an Huayi Microelectronics Co., Ltd.)
- Material: Halogen Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C | 30 | V | ||
| Gate-Source Voltage | VGSS | Tc=25C | ±20 | V | ||
| Maximum Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | ||
| Source Current-Continuous (Body Diode) | IS | Tc=25°C, Mounted on Large Heat Sink | 11 | A | ||
| Pulsed Drain Current | IDM | Tc=25°C, Pulse width limited by max. junction temperature | 80 | A | ||
| Continuous Drain Current | ID | Tc=25°C | 11 | A | ||
| Continuous Drain Current | ID | Tc=100°C | 7 | A | ||
| Maximum Power Dissipation | PD | Tc=25°C | 2.5 | W | ||
| Maximum Power Dissipation | PD | Tc=100°C | 1.0 | W | ||
| Thermal Resistance, Junction-to-Case | RTJc | 50 | °C/W | |||
| Thermal Resistance, Junction-to-Ambient | RTJA | 80 | °C/W | |||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25°C, RG=25Ω, VGS=10V | 22 | mJ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250μA | 30 | V | ||
| Drain-to-Source Leakage Current | IDSS | VDS=30V, VGS=0V | 1 | μA | ||
| Drain-to-Source Leakage Current | IDSS | TJ=125°C | 50 | μA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250μA | 1 | 1.4 | 3 | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | ±100 | nA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, IDS=6A | 9.5 | 11 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, IDS=5A | 11.5 | 13.5 | mΩ | |
| Diode Forward Voltage | VSD | ISD=6A, VGS=0V | 0.7 | 1.0 | V | |
| Reverse Recovery Time | trr | ISD=6A, dISD/dt=100A/μs | 9 | ns | ||
| Reverse Recovery Charge | Qrr | 10 | nC | |||
| Gate Resistance | RG | VGS=0V, VDS=0V, F=1 MHz | 3 | Ω | ||
| Input Capacitance | Ciss | VGS=0V, VDS=15V, Frequency=1.0MHz | 1050 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=15V, Frequency=1.0MHz | 184 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=15V, Frequency=1.0MHz | 115 | pF | ||
| Turn-on Delay Time | td(ON) | VDD=15V, RG=3Ω, IDS=6A, VGS=10V | 5 | ns | ||
| Turn-on Rise Time | Tr | VDD=15V, RG=3Ω, IDS=6A, VGS=10V | 9 | ns | ||
| Turn-off Delay Time | td(OFF) | VDD=15V, RG=3Ω, IDS=6A, VGS=10V | 16 | ns | ||
| Turn-off Fall Time | Tf | VDD=15V, RG=3Ω, IDS=6A, VGS=10V | 6 | ns | ||
| Total Gate Charge | Qg | VDS =24V, VGS=10V, ID=6A | 29 | nC | ||
| Gate-Source Charge | Qgs | VDS =24V, VGS=10V, ID=6A | 4.5 | nC | ||
| Gate-Drain Charge | Qgd | VDS =24V, VGS=10V, ID=6A | 7.4 | nC | ||
2410121314_HUAYI-HY1103S_C358003.pdf
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