N Channel MOSFET Switching Transistor HUAYI HY1607B Suitable for Inverter Power Management Applications

Key Attributes
Model Number: HY1607B
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
277pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.203nF
Output Capacitance(Coss):
362pF
Pd - Power Dissipation:
115W
Gate Charge(Qg):
84nC@10V
Mfr. Part #:
HY1607B
Package:
TO-263-2L
Product Description

HY1607 N-Channel MOSFET

The HY1607 is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers Avalanche Tested, Reliable, and Rugged performance, with Lead-Free and RoHS Compliant devices available. Applications include switching applications and power management for inverter systems.

Product Attributes

  • Brand: HYMEXA
  • Origin: China
  • Certifications: RoHS Compliant, Lead-Free

Technical Specifications

ModelPackage TypeVDSS (V)ID (A)RDS(ON) (m)VGS(th) (V)PD (W)TJ (C)TSTG (C)
HY1607TO-220FB-3L603018 (Typ)2 - 4150 (TC=25C)150-55 to 150
HY1607TO-263-2L603018 (Typ)2 - 4150 (TC=25C)150-55 to 150
HY1607TO-3PM-3S603018 (Typ)2 - 4150 (TC=25C)150-55 to 150
HY1607TO-3PS-3L603018 (Typ)2 - 4150 (TC=25C)150-55 to 150
HY1607TO-220MF-3L603018 (Typ)2 - 4150 (TC=25C)150-55 to 150

2410010003_HUAYI-HY1607B_C357991.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.