Switching MOSFET HUAYI HYG045N03LA1C1 N Channel Enhancement Mode with RoHS Compliant Green Material
Key Attributes
Model Number:
HYG045N03LA1C1
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
228pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.106nF
Pd - Power Dissipation:
23W
Gate Charge(Qg):
46.2nC@10V
Mfr. Part #:
HYG045N03LA1C1
Package:
PDFN-8(3.1x3.1)
Product Description
Product Overview
The HYG045N03LA1C1 is an N-Channel Enhancement Mode MOSFET designed for switching applications. It offers low on-state resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested, and a reliable, rugged design. This device is available in Halogen Free and Green versions, complying with RoHS standards.
Product Attributes
- Brand: HYM (Huayi Microelectronics)
- Origin: China
- Material: Halogen Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | - | - | 30 | V | |
| VGSS | Gate-Source Voltage | - | - | ±20 | V | |
| TJ | Junction Temperature Range | -55 | - | 175 | °C | |
| TSTG | Storage Temperature Range | -55 | - | 175 | °C | |
| IS | Source Current-Continuous(Body Diode) | TC=25°C | - | - | 50 | A |
| IDM | Pulsed Drain Current | TC=25°C | - | - | 210 | A |
| ID | Continuous Drain Current | TC=25°C | - | - | 50 | A |
| ID | Continuous Drain Current | TC=100°C | - | - | 35 | A |
| PD | Maximum Power Dissipation | TC=25°C | - | - | 23 | W |
| PD | Maximum Power Dissipation | TC=100°C | - | - | 11.5 | W |
| RθJC | Thermal Resistance, Junction-to-Case | - | 6.5 | - | °C/W | |
| RθJA | Thermal Resistance, Junction-to-Ambient | - | 75 | - | °C/W | |
| EAS | Single Pulsed-Avalanche Energy | L=0.1mH | - | 100 | - | mJ |
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250μA | 30 | - | - | V |
| IDSS | Drain-to-Source Leakage Current | VDS=30V, VGS=0V | - | - | 1.0 | μA |
| IDSS | Drain-to-Source Leakage Current | TJ=125°C | - | - | 50 | μA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250μA | 1 | 1.6 | 3 | V |
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, IDS=20A | - | 3.9 | 4.8 | mΩ |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, IDS=20A | - | 5.2 | 6.5 | mΩ |
| VSD | Diode Forward Voltage | ISD=20A, VGS=0V | - | 0.8 | 1.1 | V |
| trr | Reverse Recovery Time | ISD=6A, dISD/dt=100A/μs | - | 14.5 | - | ns |
| Qrr | Reverse Recovery Charge | - | 6.1 | - | nC | |
| RG | Gate Resistance | VGS=0V, VDS=0V, Frequency=1.0MHz | - | 5.9 | - | Ω |
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1MHz | - | 2106 | - | pF |
| Coss | Output Capacitance | - | 273 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 228 | - | pF | |
| td(ON) | Turn-on Delay Time | VDD=15V, RG=4Ω, IDS=6A, VGS=10V | - | 8.0 | - | ns |
| Tr | Turn-on Rise Time | - | 19.0 | - | ns | |
| td(OFF) | Turn-off Delay Time | - | 61.8 | - | ns | |
| Tf | Turn-off Fall Time | - | 37.3 | - | ns | |
| Qg | Total Gate Charge | VDS =24V, VGS=10V, ID=10A | - | 46.2 | - | nC |
| Qg | Total Gate Charge | VGS=4.5V | - | 23.2 | - | nC |
| Qgs | Gate-Source Charge | - | 7.0 | - | nC | |
| Qgd | Gate-Drain Charge | - | 10.4 | - | nC | |
2409302203_HUAYI-HYG045N03LA1C1_C2911691.pdf
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