Industrial motor control triac HXY MOSFET BT134-800 featuring excellent thermal cycling performance
Key Attributes
Model Number:
BT134-800
Product Custom Attributes
Holding Current (Ih):
30mA
Current - Gate Trigger(Igt):
10mA
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
2A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
20A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
2V
Mfr. Part #:
BT134-800
Package:
SOT-89
Product Description
Product Overview
Glass passivated triacs in a plastic package, designed for applications requiring high bidirectional transient and blocking voltage capability and excellent thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating, and static switching.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen, China
- Package: SOT-89
- Product ID: BT134-800
- Marking: BT134-800
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| VDRM /VRRM | Repetitive peak off-state voltage | 800 | V | |||
| IGM | Peak Gate Current | 1 | A | |||
| VGM | Peak gate voltage | 5 | V | |||
| PGM | Peak gate power | 1 | W | |||
| Tj | Junction Temperature | -40 | 125 | C | ||
| G(AV) | Average Gate Power Dissipation | 0.5 | W | |||
| IT(RMS) | RMS on-state current | 16 | A | |||
| IT | Non repetitive surge peak on-state current | t = 2ms, Tj =25C | 200 | A | ||
| IT | It for fusing | t =16.7ms, Tj =25C | 16 | A | ||
| It | It for fusing | t = 10 ms | 2 | As | ||
| dl/dt | Critical-rate of rise of commutation current | IG=2IGT, tr100ns, F=120Hz | 50 | A/s | ||
| dV/dt | Critical-rate of rise of commutation voltage | Tj =125C | 20 | V/s | ||
| Tstg | Storage Temperature | -40 | 150 | C | ||
| Electrical Characteristics | ||||||
| IDRM,IRRM | Repetitive Peak Off-State Current / Repetitive Peak Reverse Current | VDRM=VRRM, Tj =25C | 1 | mA | ||
| IDRM,IRRM | Repetitive Peak Off-State Current / Repetitive Peak Reverse Current | VDRM=VRRM, Tj =125C | 50 | mA | ||
| VGD | Gate non-trigger voltage | VD= 1/2V DRM | 0.2 | V | ||
| VTM | On-state voltage | IT=2A,tp=380s | 1.65 | V | ||
| IGT | Gate trigger current | T2(+), G(+) | 10 | mA | ||
| IGT | Gate trigger current | T2(+), G(-) | 10 | mA | ||
| IGT | Gate trigger current | T2(-), G(+) | 10 | mA | ||
| IGT | Gate trigger current | T2(-), G(-) | 10 | mA | ||
| VGT | Gate trigger voltage | T2(+), G(+), VD=12V, RL=100 | 0.8 | V | ||
| VGT | Gate trigger voltage | T2(+), G(-), VD=12V, RL=100 | 0.8 | V | ||
| VGT | Gate trigger voltage | T2(-), G(+), VD=12V, RL=100 | 0.8 | V | ||
| VGT | Gate trigger voltage | T2(-), G(-), VD=12V, RL=100 | 0.8 | V | ||
| IH | Holding current | VD=12V, IGT=100mA | 30 | mA | ||
| (dl/dt)c | Critical-rate of rise of commutation current | IG =0.1A, dlG/dt=5A/uS | 5.4 | A/ms | ||
| t gt | Turn-on time | ITM =16A ,VDM=V DRM, Tj =125C | 2 | s | ||
| (dV/dt)c | Rate of change of commutating voltage | VDM=67%V DRM, Tj =125C | 20 | V/s | ||
2508121550_HXY-MOSFET-BT134-800_C50275352.pdf
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