N Channel Enhancement Mode MOSFET HUAYI HY1906D Designed for Inverter Systems and Power Electronics
Key Attributes
Model Number:
HY1906D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-
RDS(on):
7mΩ@10V,35A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
274pF
Number:
1 N-channel
Output Capacitance(Coss):
405pF
Input Capacitance(Ciss):
4.6nF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
104nC@10V
Mfr. Part #:
HY1906D
Package:
TO-252
Product Description
HY1906D/U/V - N-Channel Enhancement Mode MOSFET
The HY1906D/U/V is a high-performance N-Channel Enhancement Mode MOSFET designed for various power management applications. It features low on-state resistance, avalanche rating, and a reliable, rugged construction. Available in lead-free and green (RoHS compliant) options, this MOSFET is ideal for inverter systems and other demanding power electronics applications.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Green Devices Available
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 70 | V | |||
| VGSS | Gate-Source Voltage | ±25 | V | |||
| TJ | Maximum Junction Temperature | (TC=25°C Unless Otherwise Noted) | 175 | °C | ||
| TSTG | Storage Temperature Range | -55 | to | 175 | °C | |
| IS | Diode Continuous Forward Current | TC=25°C Mounted on Large Heat Sink | 385 | A | ||
| IDM | Pulsed Drain Current | TC=25°C | 252 | A | ||
| ID | Continuous Drain Current | TC=100°C | 70 | A | ||
| PD | Maximum Power Dissipation | TC=100°C | 28 | W | ||
| RθJC | Thermal Resistance-Junction to Case | 1.1 | °C/W | |||
| RθJA | Thermal Resistance-Junction to Ambient | 110 | °C/W | |||
| EAS | Drain-Source Avalanche Energy | L=0.5mH | 60 | mJ | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250µA | 60 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=60V, VGS=0V | 1 | µA | ||
| IDSS | Zero Gate Voltage Drain Current | TJ=85°C | 10 | µA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250µA | 2 | 3 | 4 | V |
| IGSS | Gate Leakage Current | VGS=±25V, VDS=0V | ±100 | nA | ||
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=35A | 6.3 | 7.0 | mΩ | |
| VSD | Diode Forward Voltage | ISD=35A, VGS=0V | 0.8 | 1.2 | V | |
| trr | Reverse Recovery Time | 50 | ns | |||
| Qrr | Reverse Recovery Charge | ISD=35A, dlSD/dt=100A/µs | 95 | nC | ||
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 1.0 | Ω | ||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | 3400 | pF | ||
| Coss | Output Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | 385 | pF | ||
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | 62.5 | pF | ||
| td(ON) | Turn-on Delay Time | VDD=30V, RG =4Ω, IDS=35A, VGS=10V, | 21 | ns | ||
| tr | Turn-on Rise Time | VDD=30V, RG =4Ω, IDS=35A, VGS=10V, | 31 | ns | ||
| td(OFF) | Turn-off Delay Time | VDD=30V, RG =4Ω, IDS=35A, VGS=10V, | 35 | ns | ||
| tf | Turn-off Fall Time | VDD=30V, RG =4Ω, IDS=35A, VGS=10V, | 27 | ns | ||
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS=48V, VGS=10V, IDS=35A | 34 | nC | ||
| Qgs | Gate-Source Charge | VDS=48V, VGS=10V, IDS=35A | 17 | nC | ||
| Qgd | Gate-Drain Charge | VDS=48V, VGS=10V, IDS=35A | 10.4 | nC | ||
Applications
- Power Management for Inverter Systems
Package Information
Available in TO-251-3S, TO-252-2L, and TO-251-3L packages.
Ordering and Marking Information
Format: HY1906[Package Code] [Date Code]
Example: HY1906D/U/V
Reliability and Compliance
Lead Free and Green Devices Available (RoHS Compliant). Meets or exceeds the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification. "Green" signifies lead-free (RoHS compliant) and halogen-free.
Contact Information
Huayi Microelectronics Co., Ltd.
No.8928, Shangji Road, Economic and Technological Development Zone, Xi'an, China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
Web net: www.hymexa.com
2410121924_HUAYI-HY1906D_C122491.pdf
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