HYG064N08NA1P N Channel MOSFET 80 Volt 120 Amp Low On Resistance 6.4 Milliohm Suitable for Switching
Key Attributes
Model Number:
HYG064N08NA1P
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.4mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
205pF
Number:
1 N-channel
Pd - Power Dissipation:
208W
Input Capacitance(Ciss):
3.08nF
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
HYG064N08NA1P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG064N08NA1P/B is an N-Channel MOSFET designed for switching applications and power management in inverter systems. It features 80V/120A capability with a low on-resistance of 6.4m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available.
Product Attributes
- Brand: HYM (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Part Number | Package | VDSS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | VGS(th) (V) | EAS (mJ) | PD (W) |
| HYG064N08NA1P/B | TO-220FB-3L | 80 | 120 | 6.4 (typ.) | 2-4 | 436 | 208 |
| HYG064N08NA1P/B | TO-263-2L | 80 | 120 | 6.4 (typ.) | 2-4 | 436 | 208 |
Electrical Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS= 250A | 80 | - | - | V |
| IDSS | Drain-to-Source Leakage Current | VDS= 80V,VGS=0V | - | - | 1 | A |
| IDSS | Drain-to-Source Leakage Current | TJ=125C | - | - | 50 | A |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS= 250A | 2 | 3 | 4 | V |
| IGSS | Gate-Source Leakage Current | VGS=25V,VDS=0V | - | - | 100 | nA |
| RDS(ON) | Drain-Source On-State Resistance | VGS= 10V,IDS= 40A | - | 6.4 | 7.5 | m |
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | ISD=40A,VGS=0V | - | 0.83 | 1 | V |
| trr | Reverse Recovery Time | ISD=40A,dISD/dt=100A/s | - | 42 | - | ns |
| Qrr | Reverse Recovery Charge | - | - | 88 | - | nC |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | - | 1.5 | - | |
| Ciss | Input Capacitance | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 3080 | - | pF |
| Coss | Output Capacitance | - | - | 460 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 205 | - | pF |
| td(ON) | Turn-on Delay Time | VDD= 40V,RG=4, IDS= 20A,VGS= 10V | - | 18 | - | ns |
| Tr | Turn-on Rise Time | - | - | 84 | - | ns |
| td(OFF) | Turn-off Delay Time | - | - | 32 | - | ns |
| Tf | Turn-off Fall Time | - | - | 59 | - | ns |
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS =64V, VGS= 10V, IDS= 20A | - | 65 | - | nC |
| Qgs | Gate-Source Charge | - | - | 19 | - | nC |
| Qgd | Gate-Drain Charge | - | - | 25 | - | nC |
2410121917_HUAYI-HYG064N08NA1P_C5121334.pdf
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