Power MOSFET N Channel Enhancement Mode with 135V 200A HUAYI HYG050N13NS1B6 Low On Resistance Device
Key Attributes
Model Number:
HYG050N13NS1B6
Product Custom Attributes
Drain To Source Voltage:
135V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
181pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
11.662nF
Pd - Power Dissipation:
375W
Gate Charge(Qg):
165nC@10V
Mfr. Part #:
HYG050N13NS1B6
Package:
TO-263-6
Product Description
Product Overview
The HYG050N13NS1B6 is a N-Channel Enhancement Mode MOSFET designed for power switching applications. It features high voltage (135V) and high current (200A) capabilities with a low on-resistance of 3.8m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available. It is suitable for use in Uninterruptible Power Supply systems.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 135 | V | |||
| Gate-Source Voltage (VGSS) | ±20 | V | |||
| Maximum Junction Temperature (TJ) | 175 | °C | |||
| Storage Temperature Range (TSTG) | -55 | 175 | °C | ||
| Source Current-Continuous (IS) | Tc=25°C, Mounted on Large Heat Sink | 200 | A | ||
| Pulsed Drain Current (IDM) | Tc=25°C | 690 | A | ||
| Continuous Drain Current (ID) | Tc=25°C | 200 | A | ||
| Continuous Drain Current (ID) | Tc=100°C | 141.4 | A | ||
| Maximum Power Dissipation (PD) | Tc=25°C | 375 | W | ||
| Maximum Power Dissipation (PD) | Tc=100°C | 187.5 | W | ||
| Thermal Resistance, Junction-to-Case (RθJC) | 0.40 | °C/W | |||
| Thermal Resistance, Junction-to-Ambient (RθJA) | Surface mounted on FR-4 board. | 62 | °C/W | ||
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH | 1050 | mJ | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250μA | 135 | V | ||
| Drain-to-Source Leakage Current (IDSS) | VDS=135V,VGS=0V | 1.0 | μA | ||
| Drain-to-Source Leakage Current (IDSS) | TJ=125°C | 50 | μA | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250μA | 2 | 3 | 4 | V |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | ±100 | nA | ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=50A | 3.8 | 5.0 | mΩ | |
| Diode Forward Voltage (VSD) | ISD=50A,VGS=0V | 0.83 | 1.3 | V | |
| Reverse Recovery Time (trr) | ISD=50A,dISD/dt=100A/μs | 93.8 | ns | ||
| Reverse Recovery Charge (Qrr) | 262.6 | nC | |||
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1 MHz | 2.6 | Ω | ||
| Input Capacitance (Ciss) | VGS=0V, VDS=75V, Frequency=1.0MHz | 11662 | pF | ||
| Output Capacitance (Coss) | 887 | pF | |||
| Reverse Transfer Capacitance (Crss) | 181 | pF | |||
| Turn-on Delay Time (td(ON)) | VDD=75V,RG=4Ω, IDS=50A,VGS=10V | 44.9 | ns | ||
| Turn-on Rise Time (Tr) | 116.6 | ns | |||
| Turn-off Delay Time (td(OFF)) | 102.7 | ns | |||
| Turn-off Fall Time (Tf) | 112.5 | ns | |||
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS=75V, VGS=10V ID=50A | 165 | nC | ||
| Gate-Source Charge (Qgs) | 63 | nC | |||
| Gate-Drain Charge (Qgd) | 30 | nC | |||
2409302203_HUAYI-HYG050N13NS1B6_C2830427.pdf
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