electronic component HXY MOSFET 2P4M featuring 2A current rating and 600V voltage for industrial applications
Key Attributes
Model Number:
2P4M
Product Custom Attributes
Holding Current (Ih):
3mA
Current - Gate Trigger(Igt):
90uA
Voltage - On State(Vtm):
1.6V
Current - On State(It(RMS)):
2A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
20A@50Hz
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
2P4M
Package:
TO-92
Product Description
Product Overview
The 2P4M 2A SCR series offers a high dv/dt rate and robust resistance to electromagnetic interference, making them ideal for applications such as residual current circuit breakers, hair straighteners, and igniters.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Model: 2P4M
- Origin: Shenzhen, China
- Package Type: TO-92
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Storage junction temperature range | Tstg | -40~150 | C | |
| Operating junction temperature range | Tj | 125 | C | |
| Repetitive peak off-state voltage | VDRM | 600 | V | (Tj=25C) |
| Repetitive peak reverse voltage | VRRM | 600 | V | (Tj=25C) |
| RMS on-state current | IT(RMS) | 2 | A | |
| Non repetitive surge peak on-state current | ITSM | 20 | A | (full cycle, F=50Hz) |
| Trigger current | IGT | 90 | mA | VD=12V, RL =100 |
| Trigger voltage | VGT | 0.8 | V | VD=12V, RL =100 |
| Gate to cathode leakage current | VGD | 0.2 | V | VD=VDRM Tj=110C |
| Holding current | IH | - | mA | IT=50mA |
| Rate of rise of off-state voltage | dV/dt | 20 | V/s | VD=2/3VDRM Tj=110C RGK=1K |
| Peak on-state voltage | VTM | 3.300 ~ 3.700 | V | ITM=2A |
| Off-state current | IDRM | 0.1 | mA | VD=VDRM RGK=1k |
| Reverse leakage current | IRRM | - | mA | VRRM RGK=1k |
2508201703_HXY-MOSFET-2P4M_C50313795.pdf
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