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quality N Channel MOSFET HUAYI HY1906B 60 Volt 120 Amp Power Management Component for Industrial Electronics factory
quality N Channel MOSFET HUAYI HY1906B 60 Volt 120 Amp Power Management Component for Industrial Electronics factory

N Channel MOSFET HUAYI HY1906B 60 Volt 120 Amp Power Management Component for Industrial Electronics

Key Attributes
Model Number: HY1906B
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
276pF
Number:
1 N-channel
Output Capacitance(Coss):
876pF
Input Capacitance(Ciss):
4.577nF
Pd - Power Dissipation:
188W
Gate Charge(Qg):
96nC@10V
Mfr. Part #:
HY1906B
Package:
TO-263-2L
Product Description

Product Overview

The HY1906P/B is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a 60V/120A rating and low on-resistance (RDS(ON) = 6.0 m typ. @ VGS=10V). This device is avalanche rated, reliable, rugged, and available in lead-free and green (RoHS compliant) options. It comes in TO-263-2L (B) and TO-220FB-3L (P) packages.

Product Attributes

  • Brand: HUAYI
  • Origin: China
  • Certifications: RoHS Compliant, Lead Free, Green Devices Available

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDSS Drain-Source Voltage 60 V
VGSS Gate-Source Voltage ±25 V
TJ Maximum Junction Temperature 175 °C
TSTG Storage Temperature Range -55 175 °C
ID Continuous Drain Current TC=100°C 80 A
IDM Pulsed Drain Current TC=25°C 276 A
PD Maximum Power Dissipation TC=100°C 94 W
RθJC Thermal Resistance-Junction to Case 0.8 °C/W
RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W
EAS Avalanche Energy, Single Pulsed L=0.5mH 380** mJ
Electrical Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 60 V
IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V, TJ=85°C 10 µA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 2 3 4 V
IGSS Gate Leakage Current VGS=±25V, VDS=0V ±100 nA
RDS(ON) Drain-Source On-state Resistance VGS=10V, IDS=60A 6.0 7.5 mΩ
VSD Diode Forward Voltage ISD=60A, VGS=0V 0.8 1.2 V
trr Reverse Recovery Time ISD=60A, dlSD/dt=100A/µs 50 ns
Qrr Reverse Recovery Charge ISD=60A, dlSD/dt=100A/µs 95 nC
Ciss Input Capacitance VGS=0V, VDS=25V, Frequency=1.0MHz 4577 pF
Coss Output Capacitance VGS=0V, VDS=25V, Frequency=1.0MHz 876 pF
Crss Reverse Transfer Capacitance VGS=0V, VDS=25V, Frequency=1.0MHz 206 pF
td(ON) Turn-on Delay Time VDD=30V, RG=6Ω, IDS=60A, VGS=10V 13 ns
tr Turn-on Rise Time VDD=30V, RG=6Ω, IDS=60A, VGS=10V 11 ns
td(OFF) Turn-off Delay Time VDD=30V, RG=6Ω, IDS=60A, VGS=10V 40 ns
tf Turn-off Fall Time VDD=30V, RG=6Ω, IDS=60A, VGS=10V 60 ns
Qg Total Gate Charge VDS=30V, VGS=10V, IDS=60A 96 nC
Qgs Gate-Source Charge VDS=30V, VGS=10V, IDS=60A 21 nC
Qgd Gate-Drain Charge VDS=30V, VGS=10V, IDS=60A 23 nC

2410122028_HUAYI-HY1906B_C330379.pdf

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