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quality Switching Application N Channel MOSFET HUAYI HYG011N04LS1B6 with Low On Resistance and Robust Design factory
quality Switching Application N Channel MOSFET HUAYI HYG011N04LS1B6 with Low On Resistance and Robust Design factory

Switching Application N Channel MOSFET HUAYI HYG011N04LS1B6 with Low On Resistance and Robust Design

Key Attributes
Model Number: HYG011N04LS1B6
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
320A
RDS(on):
0.92mΩ@10V,50A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
1.8V
Reverse Transfer Capacitance (Crss@Vds):
105pF
Number:
1 N-channel
Pd - Power Dissipation:
240W
Input Capacitance(Ciss):
5.774nF
Gate Charge(Qg):
94.8nC@10V
Mfr. Part #:
HYG011N04LS1B6
Package:
TO-263-6L
Product Description

Product Overview

The HYG011N04LS1B6 is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications, Li-battery protection, and motor control. It features low on-resistance (RDS(ON) = 0.92 m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Available in halogen-free and green (RoHS compliant) versions.

Product Attributes

  • Brand: HYG
  • Origin: China (Huayi Microelectronics Co., Ltd.)
  • Material: Halogen Free and Green Devices Available (RoHS Compliant)
  • Certifications: RoHS Compliant

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Absolute Maximum Ratings
Drain-Source VoltageVDSSTc=25C Unless Otherwise Noted--40V
Gate-Source VoltageVGSS--±20V
Junction Temperature RangeTJ--55-175°C
Storage Temperature RangeTSTG--55-175°C
Source Current-Continuous(Body Diode)ISTc=25°C, Mounted on Large Heat Sink--320A
Pulsed Drain CurrentIDMTc=25°C--1000A
Continuous Drain CurrentIDTc=25°C--320A
Continuous Drain CurrentIDTc=100°C--227A
Maximum Power DissipationPDTc=25°C--240W
Maximum Power DissipationPDTc=100°C--120W
Thermal Resistance, Junction-to-CaseRθJC--0.62-°C/W
Thermal Resistance, Junction-to-AmbientRθJASurface mounted on 1in² FR-4 board.-62.5-°C/W
Single Pulsed-Avalanche EnergyEASL=0.3mH, Limited by TJmax , starting TJ=25°C, RG= 25Ω, VGS =10V.-572-mJ
Electrical Characteristics
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS=250μA40--V
Drain-to-Source Leakage CurrentIDSSVDS=40V,VGS=0V--1μA
Drain-to-Source Leakage CurrentIDSSTJ=125°C--50μA
Gate Threshold VoltageVGS(th)VDS=VGS, IDS=250μA11.83V
Gate-Source Leakage CurrentIGSSVGS=±20V,VDS=0V--±100nA
Drain-Source On-State ResistanceRDS(ON)VGS=10V,IDS=50A-0.921.2mΩ
Drain-Source On-State ResistanceRDS(ON)VGS=4.5V,IDS=50A-1.31.6mΩ
Diode Forward VoltageVSDISD=20A,VGS=0V-0.751.3V
Reverse Recovery TimetrrISD=40A,dISD/dt=100A/μs-38.8-ns
Reverse Recovery ChargeQrr--30.7-nC
Gate ResistanceRGVGS=0V,VDS=0V,F=500KHz-1.5-Ω
Input CapacitanceCissVGS=0V, VDS=25V, Frequency=500KHz-5774-pF
Output CapacitanceCoss--1270-pF
Reverse Transfer CapacitanceCrss--105-pF
Turn-on Delay Timetd(ON)VDD=20V,RG=2.5Ω, IDS=40A,VGS=10V-15.8-ns
Turn-on Rise TimeTr--73.1-ns
Turn-off Delay Timetd(OFF)--64-ns
Turn-off Fall TimeTf--97.9-ns
Total Gate ChargeQgVDS=32V, IDS=40A, VGS=10V-94.8-nC
Total Gate ChargeQgVDS=32V, IDS=40A, VGS=4.5V-45.6-nC
Gate-Source ChargeQgs--21.6-nC
Gate-Drain ChargeQgd--14.5-nC
Gate plateau voltageVplateau--3.4-V

2410121629_HUAYI-HYG011N04LS1B6_C5121303.pdf

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