Power switching N Channel MOSFET HUAYI HYG050N13NS1P with 135V voltage rating and 200A drain current
Key Attributes
Model Number:
HYG050N13NS1P
Product Custom Attributes
Drain To Source Voltage:
135V
Current - Continuous Drain(Id):
200A
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
176pF
Number:
1 N-channel
Pd - Power Dissipation:
375W
Output Capacitance(Coss):
905pF
Input Capacitance(Ciss):
11.687nF
Gate Charge(Qg):
165nC@10V
Mfr. Part #:
HYG050N13NS1P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG050N13NS1P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 135V and a continuous drain current of 200A, with a low on-resistance of 4.0m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available (RoHS Compliant). It is suitable for use in Uninterruptible Power Supplies and other power switching applications.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| HYG050N13NS1 | VDSS | VGS=0V,IDS=250A | - | - | 135 | V |
| VGSS | - | - | ±20 | V | ||
| TJ | - | - | 175 | C | ||
| TSTG | - | -55 | 175 | C | ||
| ID | Tc=25C | - | - | 200 | A | |
| ID | Tc=100C | - | - | 141.4 | A | |
| RDS(ON) | VGS=10V,IDS=50A | - | 4.0 | 5.0 | m | |
| BVDSS | VGS=0V,IDS=250A | 135 | - | - | V | |
| VGS(th) | VDS=VGS, IDS=250A | 2 | 3 | 4 | V | |
| Qg | VDS=75V, VGS=10V, ID=50A | - | 165 | - | nC |
2409302230_HUAYI-HYG050N13NS1P_C5121328.pdf
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