Power Management N Channel Enhancement Mode MOSFET HUAYI HY1506D with Low RDS ON and RoHS Compliance
Key Attributes
Model Number:
HY1506D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
55A
RDS(on):
13.5mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
172pF
Number:
1 N-channel
Output Capacitance(Coss):
666pF
Pd - Power Dissipation:
100W
Input Capacitance(Ciss):
3.522nF
Gate Charge(Qg):
62nC@10V
Mfr. Part #:
HY1506D
Package:
TO-252-2L
Product Description
Product Overview
The HY1506D/U/V is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a low RDS(ON) of 10.5 m (typ.) at VGS=10V, avalanche rating, and a reliable, rugged construction. Lead-free and green device options are available, compliant with RoHS standards.
Product Attributes
- Brand: HUAYI
- Material: Lead Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 60 | V | |||
| VGSS | Gate-Source Voltage | ±25 | V | |||
| TJ | Maximum Junction Temperature | 175 | °C | |||
| TSTG | Storage Temperature Range | -55 | 175 | °C | ||
| ID | Continuous Drain Current | TC=25°C | 60 | A | ||
| ID | Continuous Drain Current | TC=100°C | 38 | A | ||
| IDM | Pulsed Drain Current | TC=25°C | 200*** | A | ||
| PD | Maximum Power Dissipation | TC=25°C | 50 | W | ||
| PD | Maximum Power Dissipation | TC=100°C | 20 | W | ||
| RθJC | Thermal Resistance-Junction to Case | 1.5 | °C/W | |||
| RθJA | Thermal Resistance-Junction to Ambient | Mounted on Large Heat Sink | 62.5 | °C/W | ||
| EAS | Drain-Source Avalanche Energy | L=0.5mH | 55 | mJ | ||
| Electrical Characteristics (TC = 25°C Unless Otherwise Noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250μA | 65 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=60V, VGS=0V | 1 | μA | ||
| IDSS | Zero Gate Voltage Drain Current | TJ=85°C | 30 | μA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250μA | 1.0 | 3.0 | V | |
| IGSS | Gate Leakage Current | VGS=±25V, VDS=0V | ±100 | nA | ||
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=28A | 10.5 | 13.5 | mΩ | |
| RDS(ON) | Drain-Source On-state Resistance | VGS=4.5V, IDS=28A | 13.5 | 17 | mΩ | |
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | ISD=28A, VGS=0V | 0.8 | 1.1 | V | |
| trr | Reverse Recovery Time | ns | ||||
| Qrr | Reverse Recovery Charge | IDS=28A, dlSD/dt=100A/μs | nC | |||
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 1.2 | Ω | ||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | 1722 | pF | ||
| Coss | Output Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | 1100 | pF | ||
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | 150 | pF | ||
| td(ON) | Turn-on Delay Time | VDD=30V, RG =4Ω, IDS=28A, VGS=10V, | 21 | 39 | ns | |
| Tr | Turn-on Rise Time | 31 | ns | |||
| td(OFF) | Turn-off Delay Time | 27 | ns | |||
| Tf | Turn-off Fall Time | 22 | ns | |||
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS=48V, VGS=10V, IDS=28A | 58 | nC | ||
| Qgs | Gate-Source Charge | VDS=48V, VGS=10V, IDS=28A | 25 | nC | ||
| Qgd | Gate-Drain Charge | VDS=48V, VGS=10V, IDS=28A | 22 | nC | ||
2410121912_HUAYI-HY1506D_C2908847.pdf
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