N Channel Enhancement Mode MOSFET HUAYI HYG065N03LR1C2 with RoHS compliant halogen free construction
Key Attributes
Model Number:
HYG065N03LR1C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
55A
RDS(on):
8.6mΩ@4.5V,20A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
1.9V
Reverse Transfer Capacitance (Crss@Vds):
89pF
Number:
1 N-channel
Input Capacitance(Ciss):
732pF
Pd - Power Dissipation:
42W
Gate Charge(Qg):
17.6nC@10V
Mfr. Part #:
HYG065N03LR1C2
Package:
PDFN-8(5x6)
Product Description
HYG065N03LR1C2 - N-Channel Enhancement Mode MOSFET
The HYG065N03LR1C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications, including Li-battery protection and DC-DC converters. It features low on-state resistance (RDS(ON)) of 5.2 m (typ.) at VGS = 10V and 8.6 m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable and rugged design. This device is Halogen Free and Green (RoHS Compliant).
Product Attributes
- Brand: HYG
- Origin: Microelectronics
- Material: N-Channel Enhancement Mode MOSFET
- Certifications: Halogen Free and Green Devices Available (RoHS Compliant)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | - | - | 30 | V |
| Gate-Source Voltage | VGSS | - | - | ±20 | ±20 | V |
| Junction Temperature Range | TJ | - | -55 | - | 175 | °C |
| Storage Temperature Range | TSTG | - | -55 | - | 175 | °C |
| Source Current-Continuous(Body Diode) | IS | Tc=25°C, Mounted on Large Heat Sink | - | - | 55 | A |
| Pulsed Drain Current | IDM | Tc=25°C | - | - | 140 | A |
| Continuous Drain Current | ID | Tc=25°C | - | - | 55 | A |
| Continuous Drain Current | ID | Tc=100°C | - | - | 40 | A |
| Maximum Power Dissipation | PD | Tc=25°C | - | - | 42 | W |
| Maximum Power Dissipation | PD | Tc=100°C | - | - | 21 | W |
| Thermal Resistance, Junction-to-Case | RθJC | - | - | 3.54 | - | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | Surface mounted on 1in² FR-4 board. | - | 80 | - | °C/W |
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25°C | - | 48 | - | mJ |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250μA | 30 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=30V,VGS=0V | - | - | 1 | μA |
| Drain-to-Source Leakage Current | IDSS | TJ=125°C, VDS=30V,VGS=0V | - | - | 50 | μA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250μA | 1 | 1.9 | 3 | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | - | 5.2 | 6.3 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=20A | - | 8.4 | 10.5 | mΩ |
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | - | 0.86 | 1.3 | V |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/μs | - | 8.3 | - | ns |
| Reverse Recovery Charge | Qrr | ISD=20A,dISD/dt=100A/μs | - | 3.4 | - | nC |
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 1.6 | - | Ω |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1MHz | - | 732 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1MHz | - | 115 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1MHz | - | 89 | - | pF |
| Turn-on Delay Time | td(ON) | VDD=15V,RG=2.5Ω, IDS=20A,VGS=10V | - | 7 | - | ns |
| Turn-on Rise Time | Tr | VDD=15V,RG=2.5Ω, IDS=20A,VGS=10V | - | 48.6 | - | ns |
| Turn-off Delay Time | td(OFF) | VDD=15V,RG=2.5Ω, IDS=20A,VGS=10V | - | 17.6 | - | ns |
| Turn-off Fall Time | Tf | VDD=15V,RG=2.5Ω, IDS=20A,VGS=10V | - | 28.2 | - | ns |
| Total Gate Charge | Qg | VDS=24V, IDs=20A, VGS=10V | - | 17.6 | - | nC |
| Total Gate Charge | Qg | VDS=24V, IDs=20A, VGS=4.5V | - | 9.3 | - | nC |
| Gate-Source Charge | Qgs | VDS=24V, IDs=20A, VGS=10V | - | 3.2 | - | nC |
| Gate-Drain Charge | Qgd | VDS=24V, IDs=20A, VGS=10V | - | 5.4 | - | nC |
| Gate plateau voltage | Vplateau | VDS=24V, IDs=20A, VGS=10V | - | 3.9 | - | V |
2410121341_HUAYI-HYG065N03LR1C2_C5121299.pdf
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