P Channel Enhancement Mode MOSFET HUAYI HYG065P03LQ1D with low on resistance and high current rating
Key Attributes
Model Number:
HYG065P03LQ1D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+175℃
RDS(on):
14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
446pF
Number:
1 P-Channel
Output Capacitance(Coss):
531pF
Input Capacitance(Ciss):
3.595nF
Pd - Power Dissipation:
57.7W
Gate Charge(Qg):
76nC@10V
Mfr. Part #:
HYG065P03LQ1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG065P03LQ1 is a P-Channel Enhancement Mode MOSFET featuring low on-resistance and high current capabilities. It is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions. This MOSFET is designed for power management applications in DC/DC converters, load switching, and motor control.
Product Attributes
- Brand: HYMEXA (implied from www.hymexa.com)
- Origin: China (implied from Huayi Microelectronics Co., Ltd. address)
- Certifications: RoHS Compliant, Halogen Free
Technical Specifications
| Part Number | Feature | RDS(ON) | Drain-Source Voltage | Drain Current | Package |
| HYG065P03LQ1 | P-Channel Enhancement Mode MOSFET | 5.9m(typ.) @VGS = -10V 9.1m(typ.) @VGS = -4.5V | -30V | -70A | TO-252-2L (D), TO-251-3L (U), TO-251-3S (V) |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | -30 | V | |||
| VGSS | Gate-Source Voltage | 20 | V | |||
| TJ | Junction Temperature Range | -55 | 175 | C | ||
| TSTG | Storage Temperature Range | -55 | 175 | C | ||
| ID | Drain Current-Continuous | Tc=25C | -70 | A | ||
| ID | Drain Current-Continuous | Tc=100C | -49.5 | A | ||
| IDM | Pulsed Drain Current | Tc=25C | -280 | A | ||
| PD | Maximum Power Dissipation | Tc=25C | 57.7 | W | ||
| PD | Maximum Power Dissipation | Tc=100C | 28.8 | W | ||
| RJC | Thermal Resistance, Junction-to-Case | 2.6 | C/W | |||
| RJA | Thermal Resistance, Junction-to-Ambient | ** | 110 | C/W | ||
| EAS | Single Pulsed-Avalanche Energy | *** | mJ | |||
| Electrical Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=-250uA | -30 | V | ||
| IDSS | Drain-to-Source Leakage Current | VDS=-30V, VGS=0V | -1 | uA | ||
| IDSS | Drain-to-Source Leakage Current | TJ=125C | -50 | uA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=-250uA | -1.0 | -1.5 | -3.0 | V |
| IGSS | Gate-Source Leakage Current | VGS=20V,VDS=0V | 100 | nA | ||
| RDS(ON) | Drain-Source On-state Resistance | VGS=-10V, ID= -20A | 5.9 | 7.5 | m | |
| RDS(ON) | Drain-Source On-state Resistance | VGS=-4.5V, ID= -20A | 9.1 | m | ||
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | ISD= -20A,VGS=0V | -0.85 | -1.3 | V | |
| trr | Reverse Recovery Time | ISD= -20A,dI/dt=100A/us | ns | |||
| Qrr | Reverse Recovery Charge | nC | ||||
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V, Frequency=1.0MHz | 9 | |||
| Ciss | Input Capacitance | VGS=0V, VDS=-15V, Frequency=1.0MHz | 3595 | pF | ||
| Coss | Output Capacitance | 531 | pF | |||
| Crss | Reverse Transfer Capacitance | pF | ||||
| td(ON) | Turn-on Delay Time | 12 | ns | |||
| Tr | Turn-on Rise Time | ns | ||||
| td(OFF) | Turn-off Delay Time | ns | ||||
| Tf | Turn-off Fall Time | ns | ||||
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS = -24V ID= -20A, Vgs=-4.5V | 22 | nC | ||
| Qgs | Gate-Source Charge | nC | ||||
| Qgd | Gate-Drain Charge | nC | ||||
2410121931_HUAYI-HYG065P03LQ1D_C2931346.pdf
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