High Current N Channel MOSFET HYG020N04NA1B Suitable for Li Battery Protection and Switching Circuits
Key Attributes
Model Number:
HYG020N04NA1B
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
220A
RDS(on):
2.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
650pF
Number:
1 N-channel
Output Capacitance(Coss):
820pF
Input Capacitance(Ciss):
5.755nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
134.2nC@10V
Mfr. Part #:
HYG020N04NA1B
Package:
TO-263-2L
Product Description
Product Overview
The HYG020N04NA1 is an N-Channel Enhancement Mode MOSFET designed for switching applications and Li-battery protection. It offers a high current capability with low on-resistance, featuring 100% avalanche testing for reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HYM (Huayi Microelectronics)
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Model | Feature | Rating | Unit | Test Conditions |
| HYG020N04NA1 | Drain-Source Voltage (VDSS) | 40 | V | VGS=0V |
| Gate-Source Voltage (VGSS) | 20 | V | ||
| Junction Temperature (TJ) | -55 to 175 | C | ||
| Storage Temperature (TSTG) | -55 to 175 | C | ||
| Continuous Drain Current (ID) | 220 | A | Tc=25C, Mounted on Large Heat Sink | |
| Pulsed Drain Current (IDM) | 700 | A | Tc=25C | |
| Maximum Power Dissipation (PD) | 200 | W | Tc=25C | |
| Thermal Resistance (RJC) | 0.75 | C/W | Junction-to-Case | |
| Thermal Resistance (RJA) | 62.5 | C/W | Junction-to-Ambient | |
| Static Characteristics | Drain-Source Breakdown Voltage (BVDSS) | 40 | V | VGS=0V, IDS= 250A |
| Drain-to-Source Leakage Current (IDSS) | 1 | A | VDS=40V,VGS=0V, TJ=25C | |
| Gate Threshold Voltage (VGS(th)) | 2.7 | V | VDS=VGS, IDS= 250A | |
| Gate-Source Leakage Current (IGSS) | 100 | nA | VGS=20V,VDS=0V | |
| Drain-Source On-State Resistance (RDS(ON)) | 1.8 | m | VGS=10V,IDS=60A | |
| Diode Forward Voltage (VSD) | 0.9 | V | ISD=60A,VGS=0V | |
| Reverse Recovery Charge (Qrr) | 26 | nC | ISD=20A,dISD/dt=100A/s | |
| Dynamic Characteristics | Input Capacitance (Ciss) | 5755 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz |
| Output Capacitance (Coss) | 820 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | |
| Reverse Transfer Capacitance (Crss) | 650 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | |
| Turn-on Delay Time (td(ON)) | 17 | ns | VDD=20V,RG=4, IDS=20A,VGS=10V | |
| Gate Charge Characteristics | Total Gate Charge (Qg) | 134.2 | nC | VDS=32V, VGS=10V, IDs=60A |
| Gate-Source Charge (Qgs) | 29.6 | nC | VDS=32V, VGS=10V, IDs=60A | |
| Gate-Drain Charge (Qgd) | 48.3 | nC | VDS=32V, VGS=10V, IDs=60A |
2409302203_HUAYI-HYG020N04NA1B_C2760539.pdf
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