40V Complementary MOSFET HUAYI HYG190C04LA1S Featuring SOP8L Package and Avalanche Tested Performance

Key Attributes
Model Number: HYG190C04LA1S
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+175℃
RDS(on):
19mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
63pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
79pF
Input Capacitance(Ciss):
1.012nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
20.1nC@10V
Mfr. Part #:
HYG190C04LA1S
Package:
SOP-8
Product Description

HYG190C04LA1S Complementary MOSFET

The HYG190C04LA1S is a 40V complementary MOSFET designed for high-performance applications. It offers reliable and rugged operation with 100% avalanche testing. Available in SOP8L package, this device is RoHS compliant and halogen-free.

Product Attributes

  • Brand: HYG (Huayi Microelectronics Co., Ltd.)
  • Origin: China
  • Material: Halogen Free and Green Devices Available (RoHS Compliant)
  • Certifications: RoHS Compliant, Halogen Free

Technical Specifications

ParameterN-ChannelP-ChannelUnit
Vds40-40V
Id (Vgs=10V/ -10V)9-6.2A
Rds(on) (Vgs=10V/ -10V)15 m32 m
Rds(on) (Vgs=4.5V/ -4.5V)20 m47 m
Avalanche Tested100%100%
PackageSOP8LSOP8L

Applications

  • Synchronous Rectifiers
  • Wireless Power
  • H-bridge Motor Drive

2410121257_HUAYI-HYG190C04LA1S_C2844408.pdf

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