switching MOSFET HUAYI HY1607P with 12 milliohm on state resistance at 10 volt gate source voltage

Key Attributes
Model Number: HY1607P
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
277pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.203nF@25V
Pd - Power Dissipation:
115W
Gate Charge(Qg):
84nC@10V
Mfr. Part #:
HY1607P
Package:
TO-220
Product Description

Product Overview

The HY1607 is a high-performance N-channel enhancement mode MOSFET designed for various switching applications. It offers avalanche tested reliability, a rugged construction, and is available in Lead-Free and RoHS compliant versions. Key applications include switching applications and power management for inverter systems.

Product Attributes

  • Brand: HYNIX (implied by HY)
  • Origin: China
  • Certifications: RoHS Compliant, Halogen Free (Green product definition)

Technical Specifications

ModelPackage TypeDrain-Source Voltage (VDSS)Continuous Drain Current (ID) @ TCOn-State Resistance (RDS(ON)) @ VGS, IDMax Power Dissipation (PD) @ TCOrdering Information
HY1607TO-220FB-3L100V30A @ 25C12m @ 10V, 30A150W @ 25CHY1607P
HY1607TO-263-2L100V30A @ 25C12m @ 10V, 30A150W @ 25CHY1607B
HY1607TO-3PM-3S100V30A @ 25C12m @ 10V, 30A150W @ 25CHY1607PS
HY1607TO-3PM-3L100V30A @ 25C12m @ 10V, 30A150W @ 25CHY1607PL
HY1607TO-220MF-3L100V30A @ 25C12m @ 10V, 30A150W @ 25CHY1607MF

2410010003_HUAYI-HY1607P_C2836947.pdf

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