Power Management MOSFET HUAYI HY3606B Featuring Low On State Resistance and 60V Drain Source Voltage
Key Attributes
Model Number:
HY3606B
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
162A
Operating Temperature -:
-
RDS(on):
4.5mΩ@10V,81A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
334pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.376nF
Output Capacitance(Coss):
857pF
Pd - Power Dissipation:
214W
Gate Charge(Qg):
130nC@10V
Mfr. Part #:
HY3606B
Package:
TO-263-2L
Product Description
Product Overview
The HOOYI HY3606P/B is an N-Channel Enhancement Mode MOSFET designed for power management and switching applications. It offers high reliability, ruggedness, and is available in lead-free and green (RoHS compliant) options. Key features include a 60V breakdown voltage, 162A continuous drain current, and low on-state resistance (RDS(ON)). It is suitable for inverter systems and switching applications.
Product Attributes
- Brand: HOOYI
- Product Series: HY3606P/B
- Certifications: RoHS Compliant, Lead Free, Green
- Material: Molding compounds/die attach materials with 100% matte tin plate termination finish (for lead-free products)
- Origin: Xi'an Hooyi Semiconductor Technology Co., Ltd., China
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | Drain-Source Voltage | TC=25C Unless Otherwise Noted | 60 | V | ||
| Gate-Source Voltage | 25 | V | ||||
| Maximum Junction Temperature | 175 | C | ||||
| Storage Temperature Range | -55 | 175 | C | |||
| Diode Continuous Forward Current | TC=25C | 162 | A | |||
| Continuous Drain Current | TC=100C | 105 | A | |||
| Maximum Power Dissipation | TC=100C | 107 | W | |||
| Electrical Characteristics | Drain-Source Breakdown Voltage | VGS=0V, IDS=250A | 60 | V | ||
| Zero Gate Voltage Drain Current | VDS=60V, VGS=0V TJ=85C | 10 | A | |||
| Gate Threshold Voltage | VDS=VGS, IDS=250A | 2.0 | 3.0 | 4.0 | V | |
| Gate Leakage Current | VGS=25V, VDS=0V | 100 | nA | |||
| Drain-Source On-state Resistance | VGS=10V, IDS=81A | 0.7 | m | |||
| Diode Forward Voltage | ISD=81 A, VGS=0V | 0.8 | 1.2 | V | ||
| Reverse Recovery Charge | ISD=81A, dlSD/dt=100A/s | 52 | nC | |||
| Dynamic Characteristics | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 0.7 | |||
| Input Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | 4376 | pF | |||
| Output Capacitance | 857 | pF | ||||
| Reverse Transfer Capacitance | 334 | pF | ||||
| Gate Charge Characteristics | Total Gate Charge | VDS=48V, VGS=10V, IDS=81A | 130 | nC | ||
| Gate-Source Charge | 24 | nC | ||||
| Gate-Drain Charge | 47 | nC |
2410121704_HUAYI-HY3606B_C133396.pdf
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