Switching N Channel Enhancement Mode MOSFET HUAYI HY045N10P with 100 Volt Voltage and TO 220 Package
Key Attributes
Model Number:
HY045N10P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
RDS(on):
5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
174.6pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.4522nF
Output Capacitance(Coss):
2.842nF
Pd - Power Dissipation:
221W
Gate Charge(Qg):
67.5nC@10V
Mfr. Part #:
HY045N10P
Package:
TO-220FB
Product Description
HY045N10P/B N-Channel Enhancement Mode MOSFET
The HY045N10P/B is an N-Channel Enhancement Mode MOSFET designed for switch applications and DC/DC converters. It offers high performance with a voltage rating of 100V and a continuous drain current of 120A. Key advantages include a low on-state resistance of 4.2m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged construction. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: Hymexa
- Origin: Xi'an Huayi Microelectronics Co., Ltd.
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
Technical Specifications
| Model | Package | VDSS (V) | ID (A) | RDS(ON) (m) | VGS(th) (V) | PD (W) | EAS (mJ) |
|---|---|---|---|---|---|---|---|
| HY045N10P | TO-220FB-3L | 100 | 120 (Tc=25C) | 4.2 (typ. @VGS=10V) | 2-4 (typ. 3) | 221 (Tc=25C) | 662 (L=0.3mH) |
| HY045N10B | TO-263-2L | 100 | 120 (Tc=25C) | 4.2 (typ. @VGS=10V) | 2-4 (typ. 3) | 221 (Tc=25C) | 662 (L=0.3mH) |
Ordering and Marking Information
Package Code: P:TO-220FB-3L, B:TO-263-2L
Marking: HY045N10
Date Code: YYXXXJWW
Absolute Maximum Ratings
| Symbol | Parameter | Rating | Unit |
|---|---|---|---|
| VDSS | Drain-Source Voltage | 100 | V |
| VGSS | Gate-Source Voltage | 20 | V |
| TJ | Maximum Junction Temperature | 175 | C |
| TSTG | Storage Temperature Range | -55 to 175 | C |
| ID | Continuous Drain Current (Tc=25C) | 120 | A |
| ID | Continuous Drain Current (Tc=100C) | 81 | A |
| IDM | Pulsed Drain Current (Tc=25C) | 480 | A |
| PD | Maximum Power Dissipation (Tc=25C) | 221 | W |
| PD | Maximum Power Dissipation (Tc=100C) | 110 | W |
| IS | Source Current-Continuous (Body Diode) (Tc=25C) | 120 | A |
| RJC | Thermal Resistance, Junction-to-Case | 0.68 | C/W |
| RJA | Thermal Resistance, Junction-to-Ambient | 62.5 | C/W |
| EAS | Single Pulsed-Avalanche Energy (L=0.3mH) | 662 | mJ |
Electrical Characteristics
| Symbol | Parameter | Test Conditions | Unit | Min | Typ. | Max |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250A | V | 100 | - | - |
| IDSS | Drain-to-Source Leakage Current | VDS=100V, VGS=0V | A | - | - | 1 |
| IDSS | Drain-to-Source Leakage Current | TJ=55C | A | - | - | 5 |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | V | 2 | 3 | 4 |
| IGSS | Gate-Source Leakage Current | VGS=20V, VDS=0V | nA | - | - | 100 |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, IDS=50A | m | - | 4.2 | 5.0 |
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | ISD=50A, VGS=0V | V | - | 0.9 | 1.2 |
| trr | Reverse Recovery Time | ISD=50A, dISD/dt=100A/s | ns | - | 53 | - |
| Qrr | Reverse Recovery Charge | - | nC | - | 107 | - |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V, VDS=0V, F=1 MHz | - | 1.9 | - | |
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | - | 4452.2 | - |
| Coss | Output Capacitance | - | pF | - | 2842.0 | - |
| Crss | Reverse Transfer Capacitance | - | pF | - | 174.6 | - |
| td(ON) | Turn-on Delay Time | VDD=40V, RG=4, IDS=50A, VGS=10V | ns | - | 20 | - |
| Tr | Turn-on Rise Time | - | ns | - | 34 | - |
| td(OFF) | Turn-off Delay Time | - | ns | - | 53 | - |
| Tf | Turn-off Fall Time | - | ns | - | 23 | - |
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS =80V, VGS=10V, ID=30A | nC | - | 67.5 | - |
| Qgs | Gate-Source Charge | - | nC | - | 15.0 | - |
| Qgd | Gate-Drain Charge | - | nC | - | 18.2 | - |
2409302230_HUAYI-HY045N10P_C357998.pdf
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