Power Management N Channel MOSFET HUAYI HYG032N08NS1B6 with RoHS Compliant Halogen Free Green Material
Key Attributes
Model Number:
HYG032N08NS1B6
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.5mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
176pF
Number:
1 N-channel
Pd - Power Dissipation:
250W
Input Capacitance(Ciss):
7.714nF
Gate Charge(Qg):
120nC@10V
Mfr. Part #:
HYG032N08NS1B6
Package:
TO-263-6L
Product Description
Product Overview
The HYG032N08NS1B6 is an N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a low on-resistance of 2.5 m (typ.) at VGS=10V, 100% avalanche tested, and a reliable, rugged construction. This device is available in halogen-free and green (RoHS compliant) versions. Its primary applications include motor control, power management for inverter systems, and battery-operated tools.
Product Attributes
- Brand: HYM
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Material: Halogen-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | 80 | |||
| VGSS | Gate-Source Voltage | V | 20 | |||
| TJ | Junction Temperature Range | C | -55 | 175 | ||
| TSTG | Storage Temperature Range | C | -55 | 175 | ||
| IS | Source Current-Continuous(Body Diode) TC=25C | Mounted on Large Heat Sink | A | 200 | ||
| IDM | Pulsed Drain Current * TC=25C | A | 600 | |||
| ID | Continuous Drain Current TC=25C | A | 200 | |||
| ID | Continuous Drain Current TC=100C | A | 141.4 | |||
| PD | Maximum Power Dissipation TC=25C | W | 250 | |||
| PD | Maximum Power Dissipation TC=100C | W | 125 | |||
| RJC | Thermal Resistance, Junction-to-Case | C/W | 0.6 | |||
| RJA | Thermal Resistance, Junction-to-Ambient ** | Surface mounted on FR-4 board. | C/W | 40 | ||
| EAS | Single Pulsed-Avalanche Energy *** L=0.3mH | Limited by TJmax , starting TJ=25C, L = 0.3mH, VDS=64V, VGS =10V. | mJ | 640 | ||
| Electrical Characteristics (TC =25C Unless Otherwise Noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS=250A | V | 80 | - | - |
| IDSS | Drain-to-Source Leakage Current | VDS=80V,VGS=0V | A | 1.0 | ||
| IDSS | Drain-to-Source Leakage Current | TJ=125C | A | 50 | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | V | 2 | 3 | 4 |
| IGSS | Gate-Source Leakage Current | VGS=20V,VDS=0V | nA | 100 | ||
| RDS(ON)* | Drain-Source On-State Resistance | VGS=10V,IDS=50A | m | 2.5 | 3.2 | |
| Diode Characteristics | ||||||
| VSD* | Diode Forward Voltage | ISD=50A,VGS=0V | V | 0.87 | 1.2 | |
| trr | Reverse Recovery Time | ISD=50A,dISD/dt=100A/s | ns | 70 | - | |
| Qrr | Reverse Recovery Charge | nC | 132 | - | ||
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=500kHz | 2.5 | - | ||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=500kHz | pF | 7714 | - | |
| Coss | Output Capacitance | pF | 2664 | - | ||
| Crss | Reverse Transfer Capacitance | pF | 176 | - | ||
| td(ON) | Turn-on Delay Time | VDD=40V,RG=4, IDS=50A,VGS=10V | ns | 22 | - | |
| tr | Turn-on Rise Time | ns | 101 | - | ||
| td(OFF) | Turn-off Delay Time | ns | 87 | - | ||
| tf | Turn-off Fall Time | ns | 97 | - | ||
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS=64V, VGS=10V, ID=50A | nC | 120 | - | |
| Qgs | Gate-Source Charge | nC | 40 | - | ||
| Qgd | Gate-Drain Charge | nC | 30 | - | ||
2410121251_HUAYI-HYG032N08NS1B6_C5121304.pdf
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