Single N Channel MOSFET HUAYI HYG035N06LS1C2 Featuring Avalanche Tested Reliability and High Current
Key Attributes
Model Number:
HYG035N06LS1C2
Product Custom Attributes
Drain To Source Voltage:
65V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
112pF
Number:
1 N-channel
Output Capacitance(Coss):
1.61nF
Input Capacitance(Ciss):
3.687nF
Pd - Power Dissipation:
56W
Gate Charge(Qg):
76nC@10V
Mfr. Part #:
HYG035N06LS1C2
Package:
PDFN-8(5.9x5.2)
Product Description
Product Overview
The HYG035N06LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON)) and high continuous drain current capabilities, making it suitable for load switching, lithium battery protection, and motor drive applications in electric tools. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available.
Product Attributes
- Brand: HYG
- Model: HYG035N06LS1C2
- Package Type: PDFN8L(5x6)
- Certifications: RoHS compliant, Halogen-Free options available
Technical Specifications
| Parameter | Symbol | Test Conditions | Unit | Min | Typ. | Max |
| Static Characteristics | BVDSS | VGS=0V,IDS=250A | V | 65 | - | - |
| IDSS | VDS=65V,VGS=0V | A | - | - | 1 | |
| TJ=125 | A | - | - | 50 | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | V | 1 | 1.2 | 3 |
| Gate-Source Leakage Current | IGSS | VGS=+20V/-12V,VDS=0V | nA | - | - | 100 |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | m | - | 2.9 | 3.5 |
| VGS=4.5V,IDS=20A | m | - | 4.7 | 6.0 | ||
| Diode Forward Voltage | VSD* | ISD=20A,VGS=0V | V | - | 0.8 | 1.2 |
| Reverse Recovery Time | trr | ISD=10A,dISD/dt=100A/s | ns | - | 42 | - |
| Reverse Recovery Charge | Qrr | - | nC | - | 35 | - |
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 1.8 | - | |
| Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | - | 3687 | - |
| Coss | - | pF | - | 1610 | - | |
| Crss | - | pF | - | 112 | - | |
| Dynamic Characteristics | td(ON) | VDD=30V,RG=4, IDS=10A,VGS=10V | ns | - | 15 | - |
| Tr | - | ns | - | 29 | - | |
| td(OFF) | - | ns | - | 92 | - | |
| Tf | - | ns | - | 95 | - | |
| Gate Charge | Qg | VDS =48V, VGS=10V, IDS=20A | nC | - | 76 | - |
| Qg | VDS =48V, VGS=4.5V, IDS=20A | nC | - | 42 | - | |
| Qgs | - | nC | - | 11 | - | |
| Qgd | - | nC | - | 23 | - |
2411200002_HUAYI-HYG035N06LS1C2_C2827235.pdf
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