Single N Channel Enhancement Mode MOSFET HYG045N04LA1D with 40 Volt 77 Amp Load Switch Application

Key Attributes
Model Number: HYG045N04LA1D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
77A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.2mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
295pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.916nF
Pd - Power Dissipation:
65.2W
Gate Charge(Qg):
98.6nC@10V
Mfr. Part #:
HYG045N04LA1D
Package:
TO-252-2L
Product Description

Product Overview

The HYG045N04LA1D is a single N-Channel Enhancement Mode MOSFET designed for various applications including load switches and lithium battery protection boards. It offers a low RDS(ON) of 4.5 m (typ.) at VGS = 10V and 5.2 m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, ensuring reliability and robustness. Halogen-free options are available.

Product Attributes

  • Brand: HYG
  • Origin: China
  • Certifications: RoHS compliant, Halogen-Free

Technical Specifications

ModelFeatureRDS(ON) (typ.) @VGS=10VRDS(ON) (typ.) @VGS=4.5VVDSSID (Tc=25)PD (Tc=25)
HYG045N04LA1DSingle N-Channel Enhancement Mode MOSFET, 40V/77A4.5 m5.2 m40 V77 A65.2 W
ParameterTest ConditionsMinTyp.MaxUnit
BVDSSVGS=0V,IDS=250A40--V
IDSSVDS=40V,VGS=0V--1A
IDSSTJ=125--50A
VGS(th)VDS=VGS, IDS=250A11.63V
IGSSVGS=20V,VDS=0V--100nA
RDS(ON)VGS=10V,IDS=20A-4.55.5m
RDS(ON)VGS=4.5V,IDS=20A-5.26.3m
VSD*ISD=40A,VGS=0V-0.81.2V
trrISD=20A,dISD/dt=100A/s-18-ns
Qrr--14-nC
Gate ResistanceVGS=0V,VDS=0V,F=1MHz-2.3-
CissVGS=0V, VDS=25V, Frequency=1.0MHz-3916-pF
Coss--307-pF
Crss--295-pF
td(ON)VDD=20V,RG=4, IDS=20A,VGS=10V-10.6-ns
Tr--54.3-ns
td(OFF)--111.5-ns
Tf--86.4-ns
QgVDS =32V, VGS=10V, ID=20A-98.6-nC
QgVDS =32V, VGS=4.5V, ID=20A-49.4-nC
Qgs--12.5-nC
Qgd--25.1-nC

2409302200_HUAYI-HYG045N04LA1D_C5299896.pdf

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