Single N Channel Enhancement Mode MOSFET HYG045N04LA1D with 40 Volt 77 Amp Load Switch Application
Product Overview
The HYG045N04LA1D is a single N-Channel Enhancement Mode MOSFET designed for various applications including load switches and lithium battery protection boards. It offers a low RDS(ON) of 4.5 m (typ.) at VGS = 10V and 5.2 m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, ensuring reliability and robustness. Halogen-free options are available.
Product Attributes
- Brand: HYG
- Origin: China
- Certifications: RoHS compliant, Halogen-Free
Technical Specifications
| Model | Feature | RDS(ON) (typ.) @VGS=10V | RDS(ON) (typ.) @VGS=4.5V | VDSS | ID (Tc=25) | PD (Tc=25) |
| HYG045N04LA1D | Single N-Channel Enhancement Mode MOSFET, 40V/77A | 4.5 m | 5.2 m | 40 V | 77 A | 65.2 W |
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| BVDSS | VGS=0V,IDS=250A | 40 | - | - | V |
| IDSS | VDS=40V,VGS=0V | - | - | 1 | A |
| IDSS | TJ=125 | - | - | 50 | A |
| VGS(th) | VDS=VGS, IDS=250A | 1 | 1.6 | 3 | V |
| IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| RDS(ON) | VGS=10V,IDS=20A | - | 4.5 | 5.5 | m |
| RDS(ON) | VGS=4.5V,IDS=20A | - | 5.2 | 6.3 | m |
| VSD* | ISD=40A,VGS=0V | - | 0.8 | 1.2 | V |
| trr | ISD=20A,dISD/dt=100A/s | - | 18 | - | ns |
| Qrr | - | - | 14 | - | nC |
| Gate Resistance | VGS=0V,VDS=0V,F=1MHz | - | 2.3 | - | |
| Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 3916 | - | pF |
| Coss | - | - | 307 | - | pF |
| Crss | - | - | 295 | - | pF |
| td(ON) | VDD=20V,RG=4, IDS=20A,VGS=10V | - | 10.6 | - | ns |
| Tr | - | - | 54.3 | - | ns |
| td(OFF) | - | - | 111.5 | - | ns |
| Tf | - | - | 86.4 | - | ns |
| Qg | VDS =32V, VGS=10V, ID=20A | - | 98.6 | - | nC |
| Qg | VDS =32V, VGS=4.5V, ID=20A | - | 49.4 | - | nC |
| Qgs | - | - | 12.5 | - | nC |
| Qgd | - | - | 25.1 | - | nC |
2409302200_HUAYI-HYG045N04LA1D_C5299896.pdf
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