N Channel Enhancement Mode MOSFET HUAYI HYG023N04NR1P with Low RDS ON and RoHS Compliant Green Device
Key Attributes
Model Number:
HYG023N04NR1P
Product Custom Attributes
Drain To Source Voltage:
45V
Current - Continuous Drain(Id):
179A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.2mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
533pF
Number:
1 N-channel
Pd - Power Dissipation:
167W
Input Capacitance(Ciss):
3.466nF
Gate Charge(Qg):
82.5nC@32V
Mfr. Part #:
HYG023N04NR1P
Package:
TO-220FB-3L
Product Description
HYG023N04NR1P/B N-Channel Enhancement Mode MOSFET
The HYG023N04NR1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, including Li-battery protection. It offers high performance with a low RDS(ON) of 2.2m(typ.) at VGS = 10V, 45V/179A rating, and 100% avalanche tested for reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: Hymexa
- Model: HYG023N04NR1P/B
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Parameter | Test Conditions | HYG023N04NR1 Unit | Min | Typ. | Max |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDSS | Drain-Source Voltage | V | - | - | 45 |
| VGSS | Gate-Source Voltage | V | - | - | 25 |
| TJ | Junction Temperature Range | C | -55 | - | 175 |
| TSTG | Storage Temperature Range | C | -55 | - | 175 |
| ID | Continuous Drain Current (Tc=25C) | A | - | - | 179 |
| ID | Continuous Drain Current (Tc=100C) | A | - | - | 126 |
| IDM | Pulsed Drain Current (Tc=25C) | A | - | - | 532 |
| PD | Maximum Power Dissipation (Tc=25C) | W | - | - | 167 |
| PD | Maximum Power Dissipation (Tc=100C) | W | - | - | 83 |
| RJC | Thermal Resistance, Junction-to-Case | C/W | - | 0.9 | - |
| RJA | Thermal Resistance, Junction-to-Ambient | C/W | - | 62.5 | - |
| EAS | Single Pulsed-Avalanche Energy (L=0.3mH) | mJ | - | 441 | - |
| Static Characteristics | |||||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V, IDS= 250A) | V | 45 | - | - |
| IDSS | Drain-to-Source Leakage Current (VDS=45V,VGS=0V) | A | - | - | 1 |
| IDSS | Drain-to-Source Leakage Current (TJ=125C) | A | - | - | 5 |
| VGS(th) | Gate Threshold Voltage (VDS=VGS, IDS= 250A) | V | 2 | 2.8 | 4 |
| IGSS | Gate-Source Leakage Current (VGS=25V,VDS=0V) | nA | - | - | 100 |
| RDS(ON) | Drain-Source On-State Resistance (VGS= 10V,IDS= 40A) | m | - | 2.2 | 2.7 |
| Diode Characteristics | |||||
| VSD | Diode Forward Voltage (ISD=40A,VGS=0V) | V | - | 0.8 | 1.0 |
| trr | Reverse Recovery Time (ISD=20A,dISD/dt=100A/s) | ns | - | 27 | - |
| Qrr | Reverse Recovery Charge | nC | - | 25 | - |
| Dynamic Characteristics | |||||
| RG | Gate Resistance (VGS=0V,VDS=0V,F=1MHz) | - | 0.8 | - | |
| Ciss | Input Capacitance (VGS=0V, VDS= 25V, Frequency=1.0MHz) | pF | - | 3466 | - |
| Coss | Output Capacitance | pF | - | 626 | - |
| Crss | Reverse Transfer Capacitance | pF | - | 533 | - |
| td(ON) | Turn-on Delay Time (VDD= 20V,RG=4, IDS=20A,VGS=10V) | ns | - | 17 | - |
| Tr | Turn-on Rise Time | ns | - | 59 | - |
| td(OFF) | Turn-off Delay Time | ns | - | 40 | - |
| Tf | Turn-off Fall Time | ns | - | 56 | - |
| Gate Charge Characteristics | |||||
| Qg | Total Gate Charge (VDS = 32V, VGS= 10V, IDs= 20A) | nC | - | 82.5 | - |
| Qgs | Gate-Source Charge | nC | - | 13.8 | - |
| Qgd | Gate-Drain Charge | nC | - | 40.9 | - |
2409302230_HUAYI-HYG023N04NR1P_C4555913.pdf
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