Single N Channel Enhancement Mode MOSFET HUAYI HYG040N04LS1C1 with PDFN8L Package and RoHS Compliance
Key Attributes
Model Number:
HYG040N04LS1C1
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
75A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.1V
Reverse Transfer Capacitance (Crss@Vds):
19pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
55.5W
Input Capacitance(Ciss):
1.18nF
Gate Charge(Qg):
17.5nC@10V
Mfr. Part #:
HYG040N04LS1C1
Package:
PDFN-8L(3.3x3.3)
Product Description
HYG040N04LS1C1 Single N-Channel Enhancement Mode MOSFET
The HYG040N04LS1C1 is a single N-Channel Enhancement Mode MOSFET designed for power management and switching applications. It offers high performance with a low on-resistance of 4.1m (typ.) at VGS = 10V and 6.7m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free and green (RoHS compliant) options available. It is suitable for DC/DC power management and general switching applications.
Product Attributes
- Brand: Hymexa
- Origin: China
- Certifications: RoHS Compliant, Halogen Free
- Package: PDFN8L(3.3*3.3)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C | 40 | V | ||
| Gate-Source Voltage | VGSS | Tc=25C | 20 | V | ||
| Maximum Junction Temperature | TJ | -55 | 175 | C | ||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
| Source Current-Continuous (Body Diode) | IS | Tc=25C | 75 | A | ||
| Pulsed Drain Current | IDM | Tc=25C | 208 | A | ||
| Continuous Drain Current | ID | Tc=25C | 75 | A | ||
| Continuous Drain Current | ID | Tc=100C | 56 | A | ||
| Maximum Power Dissipation | PD | Tc=25C | 55.5 | W | ||
| Maximum Power Dissipation | PD | Tc=100C | 27.8 | W | ||
| Thermal Resistance, Junction-to-Case | RJC | 2.7 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | ** | 60 | C/W | ||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH | 90 | mJ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | 40 | V | ||
| Drain-to-Source Leakage Current | IDSS | VDS=40V,VGS=0V | 1 | A | ||
| Drain-to-Source Leakage Current | IDSS | TJ=125C | 50 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 1 | 2.1 | 3 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=10A | 4.1 | 5.0 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=10A | 6.7 | 8.0 | m | |
| Diode Forward Voltage | VSD | ISD=10A,VGS=0V | 0.79 | 1.2 | V | |
| Reverse Recovery Time | trr | ISD=10A,dISD/dt=100A/s | 18.0 | ns | ||
| Reverse Recovery Charge | Qrr | 7.5 | nC | |||
| Gate Resistance | RG | VGS=0V,VDS=0V, Frequency=1.0MHz | 2.9 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | 1180 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | 268 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | 19 | pF | ||
| Turn-on Delay Time | td(ON) | VDD=20V,RG=4, IDS=10A,VGS=10V | 7.7 | ns | ||
| Turn-on Rise Time | Tr | VDD=20V,RG=4, IDS=10A,VGS=10V | 20.7 | ns | ||
| Turn-off Delay Time | td(OFF) | VDD=20V,RG=4, IDS=10A,VGS=10V | 19.4 | ns | ||
| Turn-off Fall Time | Tf | VDD=20V,RG=4, IDS=10A,VGS=10V | 4.1 | ns | ||
| Total Gate Charge | Qg10V | VDS =32V, VGS=10V, ID=10A | 17.5 | nC | ||
| Total Gate Charge | Qg4.5V | VDS =32V, VGS=4.5V, ID=10A | 8.2 | nC | ||
| Gate-Source Charge | Qgs | VDS =32V, VGS=10V, ID=10A | 4.7 | nC | ||
| Gate-Drain Charge | Qgd | VDS =32V, VGS=10V, ID=10A | 2.5 | nC | ||
2410121317_HUAYI-HYG040N04LS1C1_C5250956.pdf
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