SiGe C technology RF transistor Infineon BFP620H7764XTSA1 for wireless communication applications
Key Attributes
Model Number:
BFP620H7764XTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.2V
Current - Collector Cutoff:
40nA
Pd - Power Dissipation:
185mW
Transition Frequency(fT):
65GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
80mA
Collector - Emitter Voltage VCEO:
2.3V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFP620H7764XTSA1
Package:
SOT-343-3D
Product Description
Product Overview
The BFP620 is a surface mount, high linearity silicon NPN RF bipolar transistor utilizing SiGe:C technology. As part of Infineon's sixth-generation transistor family, it offers excellent linearity and collector design, making it suitable for a wide range of wireless applications. This device provides cost competitiveness without compromising ease of use.
Product Attributes
- Brand: Infineon
- Technology: SiGe:C
- Product Family: Sixth Generation RF Transistor
- Certifications: Qualified for industrial applications according to JEDEC47/20/22
- Sensitive Device: ESD sensitive, observe handling precautions
Technical Specifications
| Parameter | Symbol | Values | Unit | Note or test condition |
| Minimum noise figure | NFmin | 0.7 | dB | at 1.8 GHz, 1.5 V, 5 mA |
| High gain (Transducer gain) | Gms |S21| | 21.5 | dB | at 1.8 GHz, 1.5 V, 50 mA |
| 3rd order intercept point at output | OIP3 | 25.5 | dBm | at 1.8 GHz, 2 V, 50 mA |
| Collector emitter breakdown voltage | V(BR)CEO | 2.3 - 2.8 | V | IC = 1 mA, IB = 0, open base |
| Collector emitter leakage current | ICES | 10 | A | VCE = 7.5 V, VBE = 0, E-B short circuited (max value limited by test cycle time) |
| Collector base leakage current | ICBO | 1 - 40 | nA | VCB = 5 V, IE = 0, open emitter (max value limited by test cycle time) |
| Emitter base leakage current | IEBO | 10 - 900 | nA | VEB = 0.5 V, IC = 0, open collector (max value limited by test cycle time) |
| DC current gain | hFE | 110 - 270 | VCE = 1.5 V, IC = 50 mA, pulse measured | |
| Transition frequency | fT | 65 | GHz | VCE = 1.5 V, IC = 50 mA, f = 1 GHz |
| Collector base capacitance | CCB | 0.12 - 0.2 | pF | VCB = 2 V, VBE = 0, f = 1 MHz, emitter grounded |
| Collector emitter capacitance | CCE | 0.22 | pF | VCE = 2 V, VBE = 0, f = 1 MHz, base grounded |
| Emitter base capacitance | CEB | 0.46 | pF | VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded |
| Minimum noise figure | NFmin | 1.3 | dB | at 6 GHz, 1.5 V, 5 mA |
| Power gain (Transducer gain) | Gms |S21| | 9.5 | dB | at 6 GHz, 1.5 V, 50 mA |
| Total power dissipation | Ptot | 185 | mW | TS 95 C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 - 150 | C |
2410121545_Infineon-BFP620H7764XTSA1_C17309638.pdf
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