silicon germanium rf transistor Infineon BFP 420F H6327 ideal for wireless communication applications
Key Attributes
Model Number:
BFP 420F H6327
Product Custom Attributes
Current - Collector Cutoff:
-
Pd - Power Dissipation:
210mW
Transition Frequency(fT):
25GHz
Type:
NPN
Current - Collector(Ic):
60mA
Collector - Emitter Voltage VCEO:
4.5V
Mfr. Part #:
BFP 420F H6327
Package:
TSFP-4
Product Description
Infineon RF Transistors
Infineon's RF transistors are robust, flexible, and reliable devices designed for complementary wireless solutions. They offer superior RF performance, signal quality, and robustness, making them ideal for increasing data traffic in mobile systems and infrastructure. The 7th and 8th generations, based on Silicon-germanium (SiGe) B9 technology, provide excellent linearity, noise figures, and ESD protection, enabling enhanced system sensitivity, interference immunity, and broader coverage areas for applications like WiFi connectivity, small cells, and automotive infotainment.
Product Attributes
- Brand: Infineon
- Origin: Not specified
- Material: Silicon-germanium (SiGe)
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Product Series | Generation | Technology | fT (max) | NFmin (typical) | Gain (Gmax) | Key Features | Application Scenarios |
|---|---|---|---|---|---|---|---|
| General-purpose LNAs | 1st 3rd Gen. | SiGe:C | 68 GHz | 1.42.1 dB | Not specified | Low Noise Figure | General-purpose LNAs |
| General-purpose LNAs | 4th Gen. | SiGe:C | 25 GHz | 1.1 dB | Not specified | Improved robustness with ESD | General-purpose LNAs |
| General-purpose LNAs | 5th Gen. | SiGe:C | 29 GHz | 0.9 dB | Not specified | Very low noise | General-purpose LNAs |
| General-purpose LNAs | 6th Gen. | SiGe:C | 40 GHz | 0.7 dB | Not specified | Ultra low noise | General-purpose LNAs |
| RF Transistors | 7th Gen. (B7HF process) | SiGe:C | 44 GHz | 0.6 dB | > 10 dB at 10 GHz (Gmax) | High transition frequency, high gain, high linearity, reduced power consumption, 1.5 kV HBM ESD robustness | Single- and dual-band Low-Noise Amplifier (LNA) for WiFi connectivity, gain block for buffer or driver amplifiers, mixer or VCO for frequencies > 10 GHz. Suitable for AP routers and mobile stations. |
| RF Transistors (BFx840x family) | 8th Gen. (B9HF process) | SiGe:C | 80 GHz | 0.5 dB | Not specified | Best-in-class NF and Gmax, improved high-frequency characteristics, enhanced system sensitivity and interference immunity. | High-performance WiFi connectivity, dual- and fixed-frequency Low-Noise Amplifier (LNA) solutions for AP routers and mobile stations. Suitable for emerging very high throughput wireless specifications. |
2410122020_Infineon-BFP-420F-H6327_C534092.pdf
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